BCX54BD datasheet, PDF - EEWORLD Datasheet

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BCX54BD: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MINIMOLD PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size87KB，3 Pages; ManufacturerNEC Electronics

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BCX54BD Overview

Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MINIMOLD PACKAGE-3

BCX54BD Parametric

Parameter Name	Attribute value
Maker	NEC Electronics
package instruction	POWER, MINIMOLD PACKAGE-3
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	160 MHz
VCEsat-Max	0.5 V
Base Number Matches	1

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BCX54BD Related Products

	BCX54BD	BCX54BC	BCX55BG	BCX54BB	BCX55BF	BCX56BK
Description	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MINIMOLD PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MINIMOLD PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MINIMOLD PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MINIMOLD PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MINIMOLD PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MINIMOLD PACKAGE-3
package instruction	POWER, MINIMOLD PACKAGE-3	POWER, MINIMOLD PACKAGE-3	POWER, MINIMOLD PACKAGE-3	POWER, MINIMOLD PACKAGE-3	POWER, MINIMOLD PACKAGE-3	POWER, MINIMOLD PACKAGE-3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	45 V	45 V	60 V	45 V	60 V	80 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	60	60	40	40	60
JESD-30 code	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power consumption environment	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	160 MHz	160 MHz	160 MHz	160 MHz	160 MHz	160 MHz
VCEsat-Max	0.5 V	0.5 V	0.5 V	0.5 V	0.5 V	0.5 V
Maker	NEC Electronics	-	-	NEC Electronics	NEC Electronics	NEC Electronics

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