Period. Abklingsteilheit des Durchlaßstroms beim Ausschalten
repetitive decay rate of on-state current at turn-of
i
FM
= 1000A, v
R
= 1500 V
t
C
= 85°C, f = 50Hz
t
C
= 51°C, f = 50Hz
t
vj
= t
vj max
, t
p
= 10ms
t
vj
= -40°C ... t
vj max
V
RRM
4500 V
t
vj
= +25°C ... t
vj max
V
RSM
4600 V
I
FRMSM
800 A
I
FAVM
330 A
510 A
6000 A
5
2
I
FSM
2
It
1,8.-10
As
(-di
F
/dt)
com
1000 A/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
forward slope resistance
Spitzenwert der Durchlaßverzögerungsspannung
peak value of forward recovery voltage
Sperrstrom
reverse current
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
t
vj
= t
vj max
, i
F
= 1200A
v
F
max
3,90 V
t
vj
= t
vj max
V
(TO)
2,00 V
t
vj
= t
vj max
r
T
1,49 mΩ
2)
t
vj
= t
vj max
, di
F
/dt = 1000A/µs
V
FRM
typ.150 V
t
vj
= t
vj max,
v
R
= V
RRM
i
R
100 mA
2)
t
vj
= t
vj max
i
FM
= 1000A, -di
F
/dt = 250A/µs
v
R
= 1000V, C
S
=0,125µF, R
S
= 6Ω
t
vj
= t
vj max
i
FM
= 1000A, -di
F
/dt = 250A/µs
v
R
= 1000V, C
S
=0,125µF, R
S
= 6Ω
I
RM
max 500 A
2)
Q
r
max 1250 µAs
3)
2)
3)
Richtwert für obere Streubereichsgrenze / Upper limit of scatter range ( standard value)
Richtwert für untere Streubereichsgrenze von V
T
/ Lower limit of scatter range ( standard value) of on - state voltage
HLB-M / 25.4.1996 Beuermann / Keller
Seite/page 1
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
D 371 S 45 T
S
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Kühlfläche / cooling surface
beidseitig / two-sided, DC
Anode / anode, DC
Kathode /cathode, DC
Kühlfläche / cooling surface
beidseitig / two-sided
einseitig / single sided
R
thJC
max
max
max
0,035 °C/W
0,070 °C/W
0,070 °C/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
R
thCK
max
max
0,006 °C/W
0,012 °C/W
125 °C
Höchstzulässige Sperrschichttemperatur
max. junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
t
vj max
t
c op
-40...+125 °C
t
stg
-40...+150 °C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Anpreßkraft
clampig force
Gewicht
weight
Kriechstrecke
creepage distance
Luftstrecke
air distance
Feuchteklasse
humidity classification
Schwingfestigkeit
vibration resistance
DIN 40040
Seite 3
F
10...16 kN
G
typ
250 g
30 mm
20 mm
C
2
f = 50Hz
50 m/s
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbidung mit den zugehörigen technischen Erläuterungen.
This technical Information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
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Microcontroller MCU
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