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D8407N06T

Description
Rectifier Diode, 1 Phase, 1 Element, 8408A, 600V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size250KB,9 Pages
ManufacturerEUPEC [eupec GmbH]
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D8407N06T Overview

Rectifier Diode, 1 Phase, 1 Element, 8408A, 600V V(RRM), Silicon,

D8407N06T Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-CXDB-X3
Maximum non-repetitive peak forward current70000 A
Number of components1
Phase1
Number of terminals3
Maximum output current8408 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Base Number Matches1
N
Netz-Gleichrichterdiode
Rectifier Diode
Datenblatt / Data sheet
D8407N
T
vj
= -40°C... T
vj max
V
RRM
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
Kenndaten
repetitive peak reverse voltages
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state characteristic
v
T
=
A
+
B
i
T
+
C
Ln ( i
T
+
1)
+
D
Elektrische
T
Eigenschaften
= +25°C... T
vj
vj max
400 V
600 V
450 V
650 V
13200 A
4725 A
8408 A
81000 A
70000 A
32800 A²s
24500 A²s
V
RSM
t
p
5ms
T
C
= 130 °C
T
C
= 64 °C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FRMSM
I
FAVM
I
FSM
I²t
T
vj
= T
vj max
, i
F
= 8kA
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
i
T
v
F
V
(TO)
r
T
A=
B=
C=
D=
i
R
max.
0,96 V
0,66 V
0,036 mΩ
4,167E-01
1,807E-05
6,716E-03
3,782E-03
max.
100 mA
Sperrstrom
reverse current
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
T
vj
= T
vj max
, v
R
= V
RRM
Thermische Eigenschaften
Kühlfläche / cooling surface
beidseitig / two-sided,
θ
= 180°sin
beidseitig / two-sided, DC
Kühlfläche / cooling surface
beidseitig / two-sided
R
thJC
max.
max.
max.
0,0098 °C/W
0,0092 °C/W
R
thCH
T
vj max
T
c op
T
stg
0 0214
0,0025 °C/W
180 °C
-40...+150 °C
-40...+150 °C
prepared by: M.Droldner
approved by: M.Leifeld
date of publication:
revision:
20.10.03
01
BIP AC / 20-10-2003 M.Droldner
A09/03
Seite/page
1/9

D8407N06T Related Products

D8407N06T D8407N04T
Description Rectifier Diode, 1 Phase, 1 Element, 8408A, 600V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 8408A, 400V V(RRM), Silicon,
Maker EUPEC [eupec GmbH] EUPEC [eupec GmbH]
Reach Compliance Code unknown unknown
application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-CXDB-X3 O-CXDB-X3
Maximum non-repetitive peak forward current 70000 A 70000 A
Number of components 1 1
Phase 1 1
Number of terminals 3 3
Maximum output current 8408 A 8408 A
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND
Package form DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 400 V
surface mount YES YES
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UNSPECIFIED UNSPECIFIED
Base Number Matches 1 1
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