BSM20GP60DL datasheet, PDF - EEWORLD Datasheet

BSM20GP60DL: DescriptionInsulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, ECONOPIM; CategoryDiscrete semiconductor The transistor; File Size928KB，6 Pages; ManufacturerEUPEC [eupec GmbH]

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BSM20GP60DL Overview

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, ECONOPIM

Parameter Name	Attribute value
Maker	EUPEC [eupec GmbH]
package instruction	ECONOPIM
Reach Compliance Code	unknown
Maximum collector current (IC)	20 A
Collector-emitter maximum voltage	600 V
Configuration	COMPLEX
JESD-30 code	R-XUFM-X
Number of components	7
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Base Number Matches	1

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