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MMBR951AL

Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, TO-236AB, CASE 318-07, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size46KB,1 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

MMBR951AL Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, TO-236AB, CASE 318-07, 3 PIN

MMBR951AL Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-based maximum capacity1 pF
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)75
highest frequency bandL BAND
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)8000 MHz
Base Number Matches1
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