BPX25 datasheet, PDF - EEWORLD Datasheet

BPX25: DescriptionPhoto Transistor, 800nm, 0.2A I(C), HERMETIC SEALED PACKAGE-3; CategoryLED optoelectronic/LED photoelectric; File Size26KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BPX25 Overview

Photo Transistor, 800nm, 0.2A I(C), HERMETIC SEALED PACKAGE-3

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	HERMETIC SEALED PACKAGE-3
Reach Compliance Code	unknown
ECCN code	3A001.A.2.A
Coll-Emtr Bkdn Voltage-Min	32 V
Configuration	SINGLE
Maximum dark power	100 nA
JESD-609 code	e0
Nominal photocurrent	13 mA
Installation features	THROUGH HOLE MOUNT
Number of functions	1
Maximum on-state current	0.2 A
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Optoelectronic device types	PHOTO TRANSISTOR
peak wavelength	800 nm
Maximum power dissipation	0.3 W
Maximum response time	0.000003 s
shape	ROUND
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

	BPX25	BPX29
Description	Photo Transistor, 800nm, 0.2A I(C), HERMETIC SEALED PACKAGE-3	Photo Transistor, 800nm, 0.2A I(C), HERMETIC SEALED PACKAGE-3
Is it Rohs certified?	incompatible	incompatible
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	HERMETIC SEALED PACKAGE-3	HERMETIC SEALED PACKAGE-3
Reach Compliance Code	unknown	unknown
Coll-Emtr Bkdn Voltage-Min	32 V	32 V
Configuration	SINGLE	SINGLE
Maximum dark power	100 nA	100 nA
JESD-609 code	e0	e0
Nominal photocurrent	13 mA	0.8 mA
Installation features	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT
Number of functions	1	1
Maximum on-state current	0.2 A	0.2 A
Maximum operating temperature	150 °C	100 °C
Minimum operating temperature	-40 °C	-40 °C
Optoelectronic device types	PHOTO TRANSISTOR	PHOTO TRANSISTOR
peak wavelength	800 nm	800 nm
Maximum power dissipation	0.3 W	0.3 W
Maximum response time	0.000003 s	0.000005 s
shape	ROUND	ROUND
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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