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BCW65

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size243KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric View All

BCW65 Overview

Transistor,

BCW65 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.8 A
ConfigurationSingle
Minimum DC current gain (hFE)100
JESD-609 codee3
Humidity sensitivity level1
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.65 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Nominal transition frequency (fT)100 MHz
Base Number Matches1
SOT23 NPN SILICON PLANAR
MEDIUM
PARTMARKING
BCW65A -
BCW65B -
BCW65C -
BCW66F -
BCW66G -
BCW66H -
POWER TRANSISTORS
1995
BCW65A13 -
BCW65BR -
BCW65CR -
BCW66FR -
4V
5V
6V
7P
I
(
DETAILS -
EA
EB
EC
EF
EG
EH
TYPES
-
BCW65
BCW66
I
f
ISSUE 3- AUGUST
BCW66GF - 5T
BCW66HF - 7M
COMPLEMENTARY
BCW65
BCW66
-
-
SOT23
BCW67
BCW68
ABSOLUTE MAXIMUM
PARAMETER
——..—- ..—
Collector-Base
Collector-Emitter
Emitter-Base
Continuous
Voltage
Voltage
Voltage
Collector
Current
Ores)
RATINGS
SYMBOL
BCW65
60
32
5
.—. -
800
- .. —-—
.—
BCW66
75
45
‘“
UNIT
v-
CBO
—.
——
———
v
v
v
mA
mA
mA
mW
——-—
‘“
——
‘CEO
v
Ic
EBO
Peak Collector
Base Current
Power
Current(l
‘CM
IB
P101
Range
~
Tj:T=g
!
1000
100
Dissipation
at T,mb=250C
Temperature
330
-55 to +150
Operating
and Storage
“c
3-27

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