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40HFR80M

Description
40 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AB
Categorysemiconductor    Discrete semiconductor   
File Size69KB,1 Pages
ManufacturerNaina Semiconductor
Websitehttp://www.nainasemi.com
Download Datasheet View All

40HFR80M Overview

40 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AB

40HF/40HFR
SILICON POWER DIODES
DO-5
FEATURES
• All Diffused Series
• Available in Normal & Reverse Polarity
• Industrial Grade
• Available In Avalanche Characteristic
* Available in metric and UNF thread
ELECTRICAL SPECIFICATIONS
I
F(AV)
Maximum Average Forward
Current Te=140
0
C
Maximum peak forward
V
FM
voltage drop @ Rated IF(AV)
Maximum peak one cycle
I
FRM
(non-rep) surge current 10 m sec
Maximum peak repetitive
I
FRM
surge current
I2tMaximum I2t rating (non-rep.)
for 5 to 10 m sec
40A
Ø 8.0
NAINA
40 HF/ HFR
POLARITY
A
C
Normal Reverse
7
Ø 4.0
12
27
11.5
C
A
17 A/F
M8 x 1.25
16
1.2V
500 A
200 A
1200A2 Sec
POLARITY
A
C
Normal Reverse
C
A
17 A/F
12
32
11.5
M 8 x 1.25
THERMAL MECHANICAL SPECIFICATIONS
θ
JC
Tj
T
stg
W
Maximum thermal resistance Junction to case
Operating Junction Temp.
Storage temperature
Mounting torque
(Non-lubricated threads)
Approx, weight
1
0
C/W
-65
0
C to 150
0
C
-65
0
C to 200
0
C
0.4 M-kg min,
0.6 M-kg max
13.5 & 30 gms.
ELECTRICAL RATINGS
TYPE
V
RRM
40HF/HFR
Max. repetitive peak reverse
voltage (v)
V
R(RMS)
V
R
Max. R.M.S. reverse voltage (V)
Max. D.C. Blocking Voltage (V)
Recommended R.M.S. working
Voltage(v)
Max. Average reverse leakage
current @ VRMM Tc 25
0
C uA
70
100
40
200
140
200
80
200
280
400
160
200
420
600
240
200
560
800
320
200
700
1000
400
200
840
1200
480
200
980
1120
10
100
20
200
40
400
60
600
80
800
100
1000
120
1200
140
160
1400 1600
1400 1600
560
200
640
200
I
R(AV)
NAINA SEMICONDUCTOR LTD
D95,SECTOR 63,NOIDA(INDIA)
e-mail: sales@nainasemi.com, web site :www.nainasemi.com
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