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BCV27TC

Description
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size49KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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BCV27TC Overview

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

BCV27TC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSOT-23, 3 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)4000
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)170 MHz
VCEsat-Max1 V
Base Number Matches1
SOT23 NPN SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 3 – SEPTEMBER 1995
7
FEATURES
* High V
CEO
* Low saturation voltage
COMPLEMENTARY TYPES – BCV27 – BCV28
BCV47 – BCV48
PARTMARKING DETAILS –
BCV27 – ZFF
BCV47 – ZFG
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
BCV47
MIN. MAX.
80
60
10
100
10
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
100
1.0
1.5
4K
10K
20K
4K
170 Typical
3.5 Typical
100
10
100
1.0
1.5
2K
4K
10K
2K
170 Typical
3.5 Typical
BCV27
40
30
10
800
500
100
330
-55 to +150
UNIT
V
V
V
nA
nA
µ
A
µ
A
nA
V
V
BCV27
BCV47
C
B
SOT23
BCV47
80
60
UNIT
V
V
V
mA
mA
mA
mW
°C
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Base
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
BCV27
MIN. MAX.
40
30
10
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=10
µ
A
V
CB
= 30V
V
CB
= 60V
V
CB
=30V,T
amb
=150
o
C
V
CB
=60V,T
amb
=150
o
C
V
EB
=4V
I
C
=100mA,I
B
=0.1mA*
I
C
=100mA,I
B
=0.1mA*
I
C
=100
µ
A, V
CE
=1V†
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=50mA, V
CE
=5V
f = 20MHz
V
CB
=10V, f=1MHz
f
T
C
obo
MHz
pF
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
† Periodic Sample Test Only.
For typical graphs see FMMT38A datasheet
3 - 22

BCV27TC Related Products

BCV27TC BCV27TA
Description Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Is it Rohs certified? conform to conform to
package instruction SOT-23, 3 PIN SOT-23, 3 PIN
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 30 V 30 V
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 4000 4000
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 10 10
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 170 MHz 170 MHz
VCEsat-Max 1 V 1 V
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