LESHAN RADIO COMPANY, LTD.
Silicon Pin Diode
LMVL3401T1
This device is designed primarily for VHF band switching applications but is also
suitable for use in general–purpose switching circuits. Supplied in a Surface Mount
package.
• Rugged PIN Structure Coupled with Wirebond Construction
for Optimum Reliability
• Low Capacitance – 0.7 pF Typ at V
R
= 20 Vdc
• Very Low Series Resistance at 100 MHz – 0.34 Ohms (Typ)
@ I
F
= 10 mAdc
• Pb-Free package is available
SOD– 323
1
SILICON PIN
SWITCHING DIODE
2
DEVICE MARKING AND ORDERING INFORMATION
Device
LMVL3401T1
LMVL3401T1G
Marking
4D
4D
Package
SOD-323
SOD-323
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Symbol
V
R
I
F
Symbol
P
D
Rating
Continuous Reverse Voltage
Peak Forward Current
Characteristic
Total Device Dissipation FR–5 Board,*
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Value
20
20
Max
200
1.57
635
150
Unit
Vdc
mAdc
Unit
mW
mW/°C
°C/W
°C
THERMAL CHARACTERISTICS
R
θJA
T
J
, T
stg
*FR–4 Minimum Pad
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse BreakdownVoltage
(I
R
= 10
µAdc)
Diode Capacitance
(V
R
= 20 Vdc)
Series Resistance
(I
F
= 10 mAdc, f =100MHz)
Reverse Leakage Current
(V
R
= 25 Vdc)
Symbol
V
(BR)R
C
T
R
S
I
R
Min
35
—
—
—
Typ
—
—
–
—
Max
—
1.0
0.7
0.1
Unit
Vdc
pF
Ω
µAdc
LMVL3401T1-1/3
LESHAN RADIO COMPANY, LTD.
LMVL3401T1
TYPICAL CHARACTERISTICS
I
F
, FORWARD CURRENT (mA)
R
S
, SERIES RESISTANCE (Ω)
I
F
, FORWARD CURRENT (mA)
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 1. Series Resistance
Figure 2. Forward Voltage
C
T
, DIODE CAPACITANCE (pF)
I
R,
REVERSE CURRENT (µ A)
V
R
, REVERSE VOLTAGE (VOLTS)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 3. Diode Capacitance
Figure 4. Leakage Current
LMVL3401T1-2/3
LESHAN RADIO COMPANY, LTD.
LMVL3401T1
SOD–323
NOTES:
1.CONTROLLING DIMENSION MILLIME TERS
2.LEAD THICKNESS SPECIFIEDPERL/FDRAWINGWITH
SOLDERPLATING
LMVL3401T1-3/3
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