EEWORLDEEWORLDEEWORLD

Part Number

Search

LN2302LT1G

Description
Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, ROHS COMPLIANT PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size495KB,5 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric View All

LN2302LT1G Overview

Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, ROHS COMPLIANT PACKAGE-3

LN2302LT1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresULTRA LOW RESISTANCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)2.3 A
Maximum drain current (ID)2.3 A
Maximum drain-source on-resistance0.06 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.9 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
LN2302LT1G
20V N-Channel Enhancement-Mode MOSFET
V
DS
= 20V
R
DS(ON),
Vgs@4.5V, Ids@2.8A = 60m
Ω
R
DS(ON),
Vgs@2.5V, Ids@2.0A = 115m
Ω
Features
High Density Cell Design For Ultra Low On-Resistance
Improved Shoot-Through FOM
3
1
2
SOT– 23 (TO–236AB)
3 D
H igh Density Cell Design For U ltra Low O n - Resistance
Improved Shoot-Through FO M
Pb-Free package is available
G
1
2
S
Maximum Ratings and Thermal Characteristics
(T
A
= 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
Symbol
V
DS
V
GS
I
D
I
DM
TA = 25
o
C
TA = 75 C
o
Limit
20
±8
2.3
8
0.9
0.57
Unit
V
A
Maximum Power Dissipation
P
D
T
J
, T
stg
R
qJC
2)
W
o
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted)
-55 to 150
o
C
C/W
R
qJA
145
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2. 1-in
2
2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
1/6
About the control problem of four-axis manipulator
Problem description: Design a controller for a 4-DOF horizontal joint manipulator. Hardware: personal computer, motion control card, hand-cranked pulse generator. Software: VB or VC. Functions: indivi...
dazaicong Electronics Design Contest
Do you think TI Stellaris technical documentation needs to be translated?
As the title says, do you think Stellaris documentation needs to be translated?If you want to translate, what content is generally more valuable to translate?...
soso Microcontroller MCU
CAT4139AEVB_TEST_PROCEDURE
CAT4139AEVB_TEST_PROCEDURE...
lingyufeng FPGA/CPLD
STM Development Kit Purchase
Hello everyone, I am a newcomer here and I am planning to buy an STM development kit. I would like to ask for your recommendation. Thank you! Not only for beginners, but also for future projects. I ha...
yjsd2014 stm32/stm8
What does the plus sign in assembly code mean?
I just started learning 430. When I read assembly code, I always see plus signs in the statements. For example, "mov.w #WDTPW+WDTHOLD,&WDCTL". What does this plus sign mean? Thank you in advance....
苍穹的眼泪 Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 272  154  172  1234  1443  6  4  25  30  3 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号