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LN2302LT3G

Description
Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, ROHS COMPLIANT PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size1MB,5 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric View All

LN2302LT3G Overview

Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, ROHS COMPLIANT PACKAGE-3

LN2302LT3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Other featuresULTRA LOW RESISTANCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)2.3 A
Maximum drain current (ID)2.3 A
Maximum drain-source on-resistance0.06 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.9 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
LN2302LT1G
V
DS
= 20V
R
DS(ON),
Vgs@4.5V, Ids@2.8A = 60m
Ω
R
DS(ON),
Vgs@2.5V, Ids@2.0A = 115m
Ω
1
2
3
Features
High Density Cell Design For Ultra Low On-Resistance
Improved Shoot-Through FOM
we declare that the material of product
compliance with RoHS requirements.
SOT– 23 (TO–236AB)
3 D
H igh Density Cell Design For U ltra Low O n - Resistance
Improved Shoot-Through FO M
Ordering Information
Device
LN2302LT1G
LN2302LT3G
Marking
N02
N02
Shipping
3000/Tape & Reel
G
1
2
S
10,000/Tape & Reel
Maximum Ratings and Thermal Characteristics
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
(T
A
= 25
o
C unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
TA = 25
o
C
TA = 75 C
o
Limit
20
±8
2.3
8
0.9
0.57
Unit
V
A
Maximum Power Dissipation
P
D
T
J
, T
stg
R
qJC
2)
W
o
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted)
-55 to 150
o
C
C/W
R
qJA
145
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2. 1-in
2
2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
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