VISHAY
TSML1000/1020/1030/1040
Vishay Semiconductors
Extented Power IR Emitting Diode in SMD Package
Description
TSML1000 series are high efficiency infrared emitting
diodes in GaAlAs on GaAs technology molded in
clear SMD package.
This technology represents best performance for radi-
ant power under pulse conditions, forward voltage
and reliability.
TSML1000
TSML1020
TSML1030
Features
•
•
•
•
•
•
•
•
Outstanding high radiant power
Low forward voltage
Suitable for high pulse current operation
Angle of half intensity
ϕ
= ± 12°
Peak wavelength
λ
p
= 950 nm
High reliability
Matched Phototransistor series: TEMT1000
Versatile terminal configurations
TSML1040
16852
Applications
For remote control
Photointerrupters
Punched tape readers
Encoder
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
t
≤
5sec
t
p
/T = 0.5, t
p
= 100
µs
t
p
= 100
µs
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
1.0
190
100
- 40 to + 85
- 40 to + 100
<260
400
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
°C
Basic Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Temp. Coefficient of V
F
Reverse Current
Junction Capacitance
Radiant Intensity
Radiant Power
Test condition
I
F
= 20 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
µs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 20 mA, t
p
= 20 ms
I
F
= 100 mA, t
p
= 20 ms
Symbol
V
F
V
F
TK
VF
I
R
C
j
I
e
φ
e
3
25
7
35
Min
Typ.
1.2
2.6
- 1.85
10
Max
1.5
Unit
V
V
mV/K
µA
pF
mW/sr
mW
Document Number 81033
Rev. 6, 21-May-03
www.vishay.com
1
TSML1000/1020/1030/1040
Vishay Semiconductors
Parameter
Temp. Coefficient of
φ
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
λ
p
Rise Time
Fall Time
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
Test condition
I
F
= 20 mA
Symbol
TK
φe
ϕ
λ
p
∆λ
TK
λp
t
r
t
f
Min
Typ.
- 0.6
±12
950
50
0.2
800
800
Max
VISHAY
Unit
%/K
deg
nm
nm
nm/K
ns
ns
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
200
P
V
- Power Dissipation ( mW )
10000
I
F
- Forward Current ( mA )
180
160
140
120
100
80
60
40
20
0
0
10 20 30 40 50 60 70 80 90 100
T
amb
- Ambient Temperature (
°
C )
0.1
1000
0.2
100
0.5
1.0
0.05
0.02
t
p
/ T = 0.01
10
0.01
14335
0.10
1.00
10.00
100.00
16187
t
p
- Pulse Duration ( ms )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 3. Pulse Forward Current vs. Pulse Duration
10
4
120
100
80
60
40
20
0
16188
I
F
- Forward Current ( mA )
I
F
- Forward Current ( mA )
10
3
10
2
t
p
= 100
µ
s
t
p
/ T = 0.001
10
1
10
0
0
10 20 30 40 50
60 70 80 90 100
13600
0
1
2
3
4
T
amb
- Ambient Temperature (
°
C )
V
F
- Forward Voltage ( V )
Figure 2. Forward Current vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
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2
Document Number 81033
Rev. 6, 21-May-03
VISHAY
TSML1000/1020/1030/1040
Vishay Semiconductors
1.6
1.2
V
Frel
- Relative Forward Voltage
1.1
I
e rel
,
Φ
e rel
I
F
= 10 mA
1.0
0.9
1.2
I
F
= 20 mA
0.8
0.8
0.7
0
20
40
60
80
100
0.4
0
-10 0 10
94 7993 e
50
100
140
94 7990 e
T
amb
- Ambient Temperature (
°
C )
T
amb
- Ambient Temperature (
°
C )
Figure 5. Relative Forward Voltage vs. Ambient Temperature
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
1000
Φ
ˇ
e rel
- Relative Radiant Power
I
e
- Radiant Intensity ( mW/sr )
1.25
1.0
100
0.75
0.5
10
1
0.25
I
F
= 100 mA
0
900
950
λ
-
Wavelength ( nm )
1000
0.1
10
0
16189
10
1
10
2
10
3
10
4
I
F
- Forward Current ( mA )
94 7994 e
Figure 6. Radiant Intensity vs. Forward Current
Figure 9. Relative Radiant Power vs. Wavelength
1000
Φ
e
- Radiant Power ( mW )
S
rel
- Relative Sensitivity
0
°
10
°
20
°
30°
100
1.0
0.9
0.8
0.7
40°
50°
60°
70°
80°
10
1
0.1
10
0
13602
10
1
10
2
10
3
I
F
- Forward Current ( mA )
10
4
94 8243
0.6
0.4
0.2
0
0.2
0.4
0.6
Figure 7. Radiant Power vs. Forward Current
Figure 10. Relative Radiant Sensitivity vs. Angular Displacement
Document Number 81033
Rev. 6, 21-May-03
www.vishay.com
3
TSML1000/1020/1030/1040
Vishay Semiconductors
Package Dimensions in mm
TSML1000
VISHAY
16159
Package Dimensions in mm
TSML1020
16160
www.vishay.com
4
Document Number 81033
Rev. 6, 21-May-03
VISHAY
Package Dimensions in mm
TSML1030
TSML1000/1020/1030/1040
Vishay Semiconductors
16228
Package Dimensions in mm
TSML1040
16760
Document Number 81033
Rev. 6, 21-May-03
www.vishay.com
5
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