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BUZ10L

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size406KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BUZ10L Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BUZ10L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)23 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

BUZ10L Related Products

BUZ10L
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified? incompatible
Reach Compliance Code unknown
Configuration Single
Maximum drain current (Abs) (ID) 23 A
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 75 W
surface mount NO
Terminal surface Tin/Lead (Sn/Pb)
Base Number Matches 1
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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