HL1511AF
1.55
µm
10Gb/s Laser Diode with EA Modulator
ADE-208-1405A (Z)
Rev.1
Feb. 2002
Description
The HL1511AF is a 1.55
µm
InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum
well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is
suitable as a light source for 10 Gb/s WDM systems up to 80 km.
Features
•
Wide wavelength coverage:
λp
= 1527 to 1565 nm (C-BAND)
•
Dynamic single longitudinal mode: Sr = 40 dB Typ
•
Package: open air package (chip on carrier) with micro strip-line
Package Type
•
HL1511AF: AF
Internal Circuit
2
LD
50Ω
3
Modulator
1
HL1511AF
Absolute Maximum Ratings
(T
C
= 25°C)
Item
LD forward current
Laser diode reverse voltage
Modulator forword voltage
Modulator reverse voltage
Operating temperature
Storage temperature
*
Note: without condensation
Symbol
I
F
V
R(LD)
V
F(EA)
V
R(EA)
Topr
Tstg
Value
150
2
1
5
+15 to +35
−40
to +85
Unit
mA
V
V
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Optical output power
Extinction ratio
Lasing wavelength
Side-mode suppression ratio
Transmission dispersion penalty
Cutoff frequency
RF return loss
Symbol
Ith
P
O
ER
λp
Sr
Pd
S
21
S
11
Min
0
9
1527
35
12
8
5
Typ
1550
Max
25
1565
2
Unit
mA
dBm
dB
nm
dB
dB
GHz
dB
dB
I
F(LD)
= 60 mA, Modulated
*
I
F(LD)
= 60 mA, Modulated
*
I
F(LD)
= 60 mA, Modulated
*
I
F(LD)
= 60 mA, Modulated
*
I
F(LD)
= 60 mA, Modulated
*,
SMF 80 km
I
F(LD)
= 60 mA, V
R(EA)
=
−1
V
0.13 to 5 GHz
5 GHz to 10 GHz
Test Conditions
Note: 9.95328 Gb/s, NRZ, V offset = 0 to
−1
V, V mod = 2.5 Vpp max
Rev.1, Feb. 2002, page 2 of 5
HL1511AF
Package Dimensions
As of July, 2001
Unit: mm
1
±
0.2
6
±
0.3
(1)
11.2
±
0.2
3
±
0.2
5
±
0.2
(0.1)
2
1
3
Area A
2 –
φ
2.3
±
0.2
3
±
0.2
6
±
0.2
Pm
Po
Enlargement of Area A
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LD/AF
—
—
1.1 g
2
±
0.15
Rev.1, Feb. 2002, page 3 of 5
HL1511AF
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly.
The laser beam shall be observed or adjusted through infrared camera or equivalent.
Rev.1, Feb. 2002, page 4 of 5
HL1511AF
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe Ltd.
Electronic Components Group
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585200
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straße 3
D-85622 Feldkirchen
Postfach 201, D-85619 Feldkirchen
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://semiconductor.hitachi.com.sg
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road
Hung-Kuo Building
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://semiconductor.hitachi.com.hk
Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.1, Feb. 2002, page 5 of 5
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