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KSK211-G

Description
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size159KB,4 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

KSK211-G Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3 PIN

KSK211-G Parametric

Parameter NameAttribute value
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ConfigurationSINGLE
FET technologyJUNCTION
Maximum feedback capacitance (Crss)0.15 pF
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

KSK211-G Related Products

KSK211-G KSK211-O KSK211-Y
Description RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3 PIN RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3 PIN RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3 PIN
Parts packaging code SOT-23 SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
Configuration SINGLE SINGLE SINGLE
FET technology JUNCTION JUNCTION JUNCTION
Maximum feedback capacitance (Crss) 0.15 pF 0.15 pF 0.15 pF
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
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