WEITRON
PNP Transistor
P b
Lead(Pb)-Free
3.
BASE
1.
EMITTER
COLLECTOR
2.
KSA928A
1. EMITTER
2. COLLECTOR
3. BASE
TO-92L
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
value
-30
-30
-5
-2
1
150
-55 to- +150
Units
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter
voltage
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
Test
conditions
MIN
-30
-30
-5
-0.1
-0.1
100
320
-2
-1
120
48
V
V
MHz
pF
TYPE
MAX
UNIT
V
V
V
μA
μA
I
C
= -100µA, I
E
=0
I
C
= -10 mA, I
B
=0
I
E
= -1mA, I
C
=0
V
CB
= -30V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
=-2V, I
C
= -500mA
I
C
= -1.5 A, I
B
= -0.03A
I
C
= -500 mA, V
CE
= -2V
V
CE
= -2 V, I
C
= -500mA
V
CB
=-10V,I
E
=0,f=1MHz
Transition frequency
Collector output capacitance
f
T
C
ob
CLASSIFICATION OF
Rank
Range
h
FE(2)
O
100-200
Y
160-320
WEITRON
hpp://www.weitron.com.tw
1/2
04-Dec-08
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
