SM-8 COMPLEMENTARY MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT6705
C
1
C
1
C
2
C
2
PARTMARKING DETAIL T6705
B
1
E
1
B
2
E
2
NPN
PNP
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
NPN
140
120
10
4
1
PNP
-140
-120
-10
-4
-1
UNIT
V
V
V
A
A
°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single die on
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
SYMBOL
P
tot
VALUE
2.25
2.75
18
22
55.6
45.5
UNIT
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 369
ZDT6705
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff Current
Colllector-Emitter
Cutoff Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
2K
5K
2K
0.5K
150
90
15
0.5
1.6
MIN.
140
120
10
0.01
10
0.1
10
1.0
1.5
1.8
1.7
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
µ
A
µ
A
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=120V
V
CB
=120V,
T
amb
=100°C
V
EB
=8V
V
CES
=120V
I
C
=250mA, I
B
=0.25mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, V
CE
=5V*
I
C
=50mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
V
V
V
V
100K
MHz
pF
pF
µ
s
µ
s
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
f
T
C
ibo
C
obo
t
on
t
off
I
C
=100mA, V
CE
=10V
f=20MHz
V
EB
=500mV, f=1MHz
V
CB
=10V, f=1MHz
I
C
=500mA, V
CE
=10V
I
B1
=I
B2
=0.5mA
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see ZDT605 datasheet.
3 - 370
ZDT6705
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
Collector-Emitter
Cutoff Current
Emitter Cutoff Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward
Current Transfer Ratio
SYMBOL
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
3K
3K
3K
2K
160
90
15
0.6
0.8
MIN.
-140
-120
-10
-0.1
-10
-10
-0.1
-1.3
-2.5
-1.8
-1.7
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
µ
A
µ
A
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-120V
V
CB
=-120V,
T
amb
=100°C
V
CES
=-80V
V
EB
=-8V
I
C
=-1A, I
B
=-1mA*
I
C
=-2A, I
B
=-2mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-1A, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
V
V
V
V
30K
MHz
pF
pF
µ
s
µ
s
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
f
T
C
ibo
C
obo
t
on
t
off
I
C
=-100mA, V
CE
=-10V
f=20MHz
V
EB
=-0.5V, f=1MHz
V
CE
=-10V, f=1MHz
I
C
=-0.5A, V
CE
=-10V
I
B1
=I
B2
=-0.5mA
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see ZDT705 datasheet.
3 - 371
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