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ZVC2106E

Description
Power Field-Effect Transistor, 0.28A I(D), 60V, 5ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14
CategoryDiscrete semiconductor    The transistor   
File Size42KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric View All

ZVC2106E Overview

Power Field-Effect Transistor, 0.28A I(D), 60V, 5ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14

ZVC2106E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionIN-LINE, R-PDIP-T14
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 4 ELEMENTS
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.28 A
Maximum drain-source on-resistance5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDIP-T14
JESD-609 codee0
Number of components4
Number of terminals14
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum pulsed drain current (IDM)3 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
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