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ZT84

Description
500mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
CategoryDiscrete semiconductor    The transistor   
File Size73KB,1 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric Compare View All

ZT84 Overview

500mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18

ZT84 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)75
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.2 V
Base Number Matches1

ZT84 Related Products

ZT84 BSY53 BFX85 ZT88 ZT95
Description 500mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18 750mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 1000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18 1000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknown unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.75 A 1 A 0.5 A 1 A
Collector-emitter maximum voltage 45 V 30 V 60 V 80 V 60 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 75 40 70 75 30
JEDEC-95 code TO-18 TO-39 TO-39 TO-18 TO-39
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0 e0 e0 e0
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Package body material METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 235 235 235 235 235
Polarity/channel type NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.8 W 0.8 W 0.3 W 1 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 100 MHz 50 MHz 200 MHz 60 MHz
VCEsat-Max 0.2 V 0.6 V 0.35 V 0.2 V 1.2 V
Other features LOW NOISE - - LOW NOISE LOW NOISE
Base Number Matches 1 1 1 1 -
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