Small Signal Field-Effect Transistor, 0.45A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | E-LINE PACKAGE-3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (Abs) (ID) | 0.45 A |
| Maximum drain current (ID) | 0.45 A |
| Maximum drain-source on-resistance | 2 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.7 W |
| Certification status | Not Qualified |
| Guideline | CECC |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| ZVN2106AM1 | ZVN2535AM1 | ZVN2120AM1 | ZVN0545AM1 | ZVN4206AM1 | BS107PM1 | |
|---|---|---|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, 0.45A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3 | Small Signal Field-Effect Transistor, 0.09A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3 | Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3 | Small Signal Field-Effect Transistor, 0.09A I(D), 450V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3 | Small Signal Field-Effect Transistor, 0.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3 | Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| package instruction | E-LINE PACKAGE-3 | SMALL OUTLINE, R-PSSO-G3 | E-LINE PACKAGE-3 | SMALL OUTLINE, R-PSSO-G3 | E-LINE PACKAGE-3 | SMALL OUTLINE, R-PSSO-G3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 60 V | 350 V | 200 V | 450 V | 60 V | 200 V |
| Maximum drain current (Abs) (ID) | 0.45 A | 0.09 A | 0.18 A | 0.09 A | 0.6 A | 0.12 A |
| Maximum drain current (ID) | 0.45 A | 0.09 A | 0.18 A | 0.09 A | 0.6 A | 0.12 A |
| Maximum drain-source on-resistance | 2 Ω | 35 Ω | 10 Ω | 50 Ω | 1.5 Ω | 23 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G3 | R-PSSO-G3 | R-PSSO-G3 | R-PSSO-G3 | R-PSSO-G3 | R-PSSO-G3 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES | YES |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Maximum power dissipation(Abs) | 0.7 W | - | - | 0.7 W | 0.7 W | 0.5 W |
| Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - |
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