ZXM41N10F
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET
FEATURES
•
BV
DSS
= 100V
•
Low Threshold
DEVICE MARKING
•
410
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-source voltage
Drain-gate voltage
Continuous drain current at T
amb
=25°C
Pulsed drain current
Gate-source voltage
Power dissipation at T
amb
=25°C
Operating and storage temperature range
PINOUT TOP VIEW
SYMBOL
V
DS
V
DGR
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
100
100
170
680
± 20
360
-55 to +150
SOT23
UNIT
V
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-body leakage
Zero gate voltage drain current
Static drain-source on-state
resistance
(1)
Forward transconductance
Input capacitance
(2)
Common source output
capacitance
(2)
Reverse transfer capacitance
(2)
Turn-on delay time
Rise time
(2)(3)
Turn-off delay time
Fall time
(2)(3)
(2)(3)
(2)(3)
(1)(2)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
80
100
0.5
TYP.
MAX.
UNIT CONDITIONS
V
I
D
=0.25mA, V
GS
=0V
I =1mA, V
DS
= V
GS
D
V
GS
=±20V, V
DS
=0V
V
DS
=100V, V
GS
=0V
V
GS
=4.5V, I
D
=150mA
V
GS
=3V, I
D
=50mA
mS
V
DS
=25V, I
D
=100mA
1.5
50
500
8
12
V
nA
nA
25
9
4
10
10
15
25
pF
pF
pF
ns
ns
ns
ns
V
DD
≈30V,
I
D
=280mA
V
DS
=25V, V
GS
=0V, f=1MHz
NOTES:
(1)
Measured under pulsed conditions. Width=300µs. Duty cycle 2% (2) Sample test.
(3)
Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ISSUE
2
-
OCTOBER 2006
1
SEMICONDUCTORS
ZXM41N0F
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
DIM
A
B
C
D
F
G
0.37
0.085
Min
2.67
1.20
Max
3.05
1.40
1.10
0.53
0.15
0.015
0.0034
Inches
Min
0.105
0.047
Max
0.120
0.055
0.043
0.021
0.0059
DIM
H
K
L
M
N
Millimeters
Min
0.33
0.01
2.10
0.45
Max
0.51
0.10
2.50
0.64
Inches
Max
0.013
0.0004
0.083
0.018
Max
0.020
0.004
0.0985
0.025
0.95 NOM
10 TYP
0.0375 NOM
10 TYP
1.90 NOM
0.075 NOM
© Zetex
Semiconductors
plc 2006
Europe
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Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
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For the latest product information, log on to
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ISSUE
2
-
OCTOBER 2006
SEMICONDUCTORS
2
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