ZXMP3A16G
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= -30V: R
DS(on)
= 0.045 : I
D
= -7.5A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT223
FEATURES
·
Low on-resistance
·
Fast switching speed
·
Low threshold
·
Low gate drive
·
SOT223 package
APPLICATIONS
·
DC-DC converters
·
Power management functions
·
Relay and soleniod driving
·
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
ZXMP3A16GTA
ZXMP3A16GTC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1000 units
4000 units
Top View
DEVICE MARKING
·
ZXMP
3A16
ISSUE 2 - JULY 2004
1
ZXMP3A16G
ABSOLUTE MAXIMUM RATING
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (V
GS
= -10V; T
A
=25°C)(b)
(V
GS
= -10V; T
A
=70°C)(b)
(V
GS
= -10V; T
A
=25°C)(a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
LIMIT
-30
20
-7.5
-6.0
-5.4
-24.9
-3.2
-24.9
2.0
16
3.9
31
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
62.5
32.2
UNIT
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ISSUE 2 - JULY 2004
2
ZXMP3A16G
TYPICAL CHARACTERISTICS
10
1
Max Power Dissipation (W)
-I
D
Drain Current (A)
R
DS(on)
Limited
2.0
1.6
1.2
0.8
0.4
0.0
0
20
40
60
80
100 120 140 160
DC
1s
100ms
10ms
1ms
100µs
100m
Single Pulse
10m
T
amb
=25°C
-V
DS
Drain-Source Voltage (V)
1
10
Temperature (°C)
Safe Operating Area
70
Derating Curve
Thermal Resistance (°C/W)
60
50
40
30
20
10
MaximumPower (W)
T
amb
=25°C
100
Single Pulse
T
amb
=25°C
D=0.5
10
D=0.2
D=0.1
Single Pulse
D=0.05
0
100µ 1m
10m 100m
1
10
100
1k
1
100µ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 2 - JULY 2004
3
ZXMP3A16G
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
Forward Transconductance (1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V
SD
t
rr
Q
rr
-0.85
21.2
18.7
-0.95 V
ns
nC
T
J
=25 C, I
S
=-3.6A,
V
GS
=0V
T
J
=25 C, I
F
=-2A,
di/dt= 100A/ s
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
3.8
6.1
35
19
12.9
24.9
2.67
3.86
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=-15V,V
GS
=-10V,
I
D
=-4.2A
V
DS
=-15V,V
GS
=-5V,
I
D
=-4.2A
V
DD
=-15V, I
D
=-1A
R
G
=6.0
,
V
GS
=-10V
C
iss
C
oss
C
rss
970
169
116
pF
pF
pF
V
DS
=-15V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
9.2
-1.0
0.045
0.070
S
-30
-1
100
V
A
nA
V
I
D
=-250µA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =-250 A, V
DS
= V
GS
D
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
V
GS
=-10V, I
D
=-4.2A
V
GS
=-4.5V, I
D
=-3.4A
V
DS
=-15V,I
D
=-4.2A
NOTES
(1) Measured under pulsed conditions. Width 300µ s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JULY 2004
4
ZXMP3A16G
TYPICAL CHARACTERISTICS
T = 25°C
10V
4V
-I
D
Drain Current (A)
10
-I
D
Drain Current (A)
3.5V
3V
2.5V
2V
-V
GS
T = 150°C
10V
4V
10
3.5V
3V
2.5V
2V
1.5V
1
1
-V
GS
0.1
1.5V
0.1
0.01
0.1
-V
DS
Drain-Source Voltage (V)
1
10
0.01
0.1
-V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
1.6
T = 150°C
T = 25°C
Output Characteristics
V
GS
= -10V
I
D
= -4.2A
R
DS(on)
Normalised R
DS(on)
and V
GS(th)
10
-I
D
Drain Current (A)
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
1
V
GS(th)
V
GS
= V
DS
I
D
= -250uA
-V
DS
= 10V
0.1
1
2
3
50
100
150
-V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
(Ω)
Normalised Curves v Temperature
100
-I
SD
Reverse Drain Current (A)
100
10
1
0.1
0.01
0.01
1.5V
-V
GS
2V
T = 25°C
T = 150°C
10
1
0.1
T = 25°C
2.5V
3V
3.5V
4V
10V
0.1
1
10
0.01
0.0
On-Resistance v Drain Current
-I
D
Drain Current (A)
-V
SD
Source-Drain Voltage (V)
0.2
0.4
0.6
0.8
1.0
1.2
Source-Drain Diode Forward Voltage
ISSUE 2 - JULY 2004
5
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