ZVN2535ASTOB datasheet, PDF - EEWORLD Datasheet

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ZVN2535ASTOB: DescriptionSmall Signal Field-Effect Transistor, 0.09A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size72KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZVN2535ASTOB Overview

Small Signal Field-Effect Transistor, 0.09A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZVN2535ASTOB Parametric

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	350 V
Maximum drain current (ID)	0.09 A
Maximum drain-source on-resistance	40 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 350 Volt V

DS

R

DS(on)

=35Ω

ZVN2535A

D

G

S

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

DS

I

D

I

DM

V

GS

P

tot

T

j

:T

stg

VALUE

350

90

1

±

20

700

-55 to +150

UNIT

V

mA

A

V

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source

Breakdown Voltage

Gate-Source

Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage

Drain Current

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

SYMBOL MIN.

BV

DSS

V

GS(th)

I

GSS

I

DSS

350

1

3

20

10

400

250

35

100

70

10

4

7

16

10

MAX. UNIT CONDITIONS.

V

nA

µA

mA

Ω

mS

pF

ns

(

1

)

V

DD

≈25V,

I

D

=100mA

V

DS

=25 V, V

GS

=0V, f=1MHz

I

D

=1mA, V

GS

=0V

ID=1mA, V

DS

= V

GS

V

GS

=± 20V, V

DS

=0V

V

DS

=350V, V

GS

=0

V

DS

=280V, V

GS

=0V,

T=125°C

(2)

V

DS

=25V, V

GS

=10V

V

GS

=10V,I

D

=100mA

V

DS

=25V,I

D

=100mA

I

D(on)

R

DS(on)

Forward Transconductance (1)( g

fs

2)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer Capacitance

(2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

3-372

Measured under pulsed conditions. Width=300µs. Duty cycle

≤2%

ZVN2535ASTOB Related Products

	ZVN2535ASTOB	ZVN2535ASTOA	ZVN2535ASTZ
Description	Small Signal Field-Effect Transistor, 0.09A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Field-Effect Transistor, 0.09A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Field-Effect Transistor, 0.09A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	350 V	350 V	350 V
Maximum drain current (ID)	0.09 A	0.09 A	0.09 A
Maximum drain-source on-resistance	40 Ω	40 Ω	40 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	-
Maker	-	Zetex Semiconductors	Zetex Semiconductors

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