ZHCS1006 datasheet, PDF - EEWORLD Datasheet

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ZHCS1006: DescriptionRectifier Diode, Schottky, 1 Element, 1.6A, 60V V(RRM), Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor diode; File Size160KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZHCS1006 Overview

Rectifier Diode, Schottky, 1 Element, 1.6A, 60V V(RRM), Silicon, SOT-23, 3 PIN

ZHCS1006 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.28 V
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	5 A
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Maximum output current	1.6 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	60 V
Maximum reverse recovery time	0.012 µs
surface mount	YES
technology	SCHOTTKY
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

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SOT23 SILICON HIGH CURRENT

SCHOTTKY BARRIER DIODE ”SuperBAT”

ISSUE 1 - NOVEMBER 1997

7

1

ZHCS1006

C

1

A

3

FEATURES:

•

High current capability

•

Low V

F

APPLICATIONS:

•

Mobile telecomms, PCMIA & SCSI

•

DC-DC Conversion

PARTMARKING DETAILS : S16

2

3

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Continuous Reverse Voltage

Forward Current

Forward Voltage @ I

F

= 1000mA(typ)

Average Peak Forward Current;D.C.= 50%

Non Repetitive Forward Current t≤100µs

t≤10ms

Power Dissipation at T

amb

= 25° C

Storage Temperature Range

Junction Temperature

SYMBOL

V

R

I

F

V

F

I

FAV

I

FSM

P

tot

T

stg

T

j

VALUE

60

900

600

1600

12

5

500

-55 to + 150

125

SOT23

UNIT

V

mA

mV

mA

A

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25° C unless otherwise stated).

PARAMETER

Reverse Breakdown

Voltage

Forward Voltage

SYMBOL

V

(BR)R

V

F

MIN.

60

TYP.

80

245

275

330

395

455

510

620

50

17

12

280

320

390

470

530

600

740

100

MAX.

UNIT

V

mV

µA

pF

ns

CONDITIONS.

I

R

= 300µA

I

F

=

I

F

=

I

F

=

I

F

=

I

F

=

I

F

=

I

F

=

50mA*

100mA*

250mA*

500mA*

750mA*

1000mA*

1500mA*

Reverse Current

Diode Capacitance

Reverse Recovery

Time

I

R

C

D

t

rr

V

R

= 45V

f= 1MHz,V

R

= 25V

switched from

I

F

= 500mA to I

R

=

500mA

Measured at I

R

= 50mA

*Measured under pulsed conditions. Pulse width= 300µs. Duty cycle

≤2%

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