30KP51A datasheet, PDF - EEWORLD Datasheet

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30KP51A: Description30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE; CategoryDiscrete semiconductor diode; File Size21KB，3 Pages; ManufacturerMDE Semiconductor; Websitehttp://www.mdesemiconductor.com; Environmental Compliance

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30KP51A Overview

30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

30KP51A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	MDE Semiconductor
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	EXCELLENT CLAMPING CAPABILITY, PRSM-MIN, UL RECOGNIZED
Minimum breakdown voltage	57 V
Breakdown voltage nominal value	57 V
Shell connection	ISOLATED
Maximum clamping voltage	86.4 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Maximum non-repetitive peak reverse power dissipation	30000 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	8 W
Maximum repetitive peak reverse voltage	51 V
surface mount	NO
technology	AVALANCHE
Terminal surface	TIN
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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MDE Semiconductor, Inc.

78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414

1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com

30KP SERIES

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE-30.0 TO 400 Volts

30000 Watt Peak Pulse Power

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• Glass passivated junction

• 30000W Peak Pulse Power

capability on 10/1000 µs waveform

• Excellent clamping capability

• Repetition rate (duty cycle):0.05%

• Low incremental surge resistance

• Fast response time: typically less

than 1.0 ps from 0 volts to BV

• Typical Id less than 1µA above 10V

• High temperature soldering guaranteed:

265°C/10 seconds/.375", (9.5mm) lead

length, 5lbs., (2.3kg) tension

P-600

1.0(25.4) MIN

.360(9.1)

.340(8.6)

DIA

.360(9.1)

.340(8.6)

.052(1.3)

.048(1.2)

DIA

1.0(25.4) MIN

MECHANICAL DATA

Case:Molded plastic over glass passivated junction

Terminals: Plated Axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denoted positive end (cathode)

except Bipolar

Mounting Position: Any

Weight: 0.07 ounce, 2.1 gram

Dimensions in inches (milimeters)

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA Suffix for types 30KP30 thru types 30KP400

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

RATING

Peak Pulse Power Dissipation on 10/1000 µs

waveform (NOTE 1)

Peak Pulse Current of on 10-1000 µs waveform

(NOTE 1)

Steady State Power Dissipation at Tl=75 °C

Lead Lengths.375", (9.5mm)(NOTE 2)

SYMBOL

PPM

(AV)

VALUE

Minimum 30000

SEE TABLE 1

8.0

UNITS

Watts

Amps

Watts

Peak Forward Surge Current, 8.3ms Sine-Wave

FSM

400.0

Superimposed on Rated Load, (JEDEC Method)

(NOTE 3)

Operatings and Storage Temperature Range

, T

STG

-55 to +175

NOTES:

1.Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.

2.Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.

3.8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum

Certified RoHS Compliant

UL File # E223026

Amps

°C

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