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KSB1116/1116A
KSB1116/1116A
Audio Frequency Power Amplifier & Medium
Speed Switching
• Complement to KSD1616/1616A
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
: KSB1116
: KSB1116A
: KSB1116
: KSB1116A
Ratings
-60
-80
-50
-60
-6
-1
-2
0.75
150
-55 ~ 150
Units
V
V
V
V
V
A
A
W
°C
°C
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
BE
(on)
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
* Base-Emitter On Voltage
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
: KSB1116
: KSB1116A
Test Condition
V
CB
= -60V, I
E
=0
V
EB
= -6V, I
C
= 0
V
CE
= -2V, I
C
= -100mA
V
CE
= -2V, I
C
= -1A
V
CE
= -2V, I
C
= -50mA
I
C
= -1A, I
B
= -50mA
I
C
= -1A, I
B
= -50mA
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -2V, I
C
= -100mA
V
CC
= -10V, I
C
= -100mA
I
B1
= -I
B2
= -10mA
V
BE
(off)= 2~3V
70
135
135
81
-600
-650
-0.2
-0.9
25
120
0.07
0.7
0.07
Min.
Typ.
Max.
-100
-100
600
400
-700
-0.3
-1.2
mV
V
V
pF
MHz
µs
µs
µs
Units
nA
nA
* Pulse Test: PW
≤350µs,
Duty Cycle≤2%
h
FE
Classification
Classification
h
FE1
Y
135 ~ 270
G
200 ~ 400
L
300 ~ 600
©2002 Fairchild Semiconductor Corporation
Rev. A2, January 2002
KSB1116/1116A
Typical Characteristics
-100
I
B
= -250
µ
A
I
B
= -200
µ
A
-1.0
I
B
= -5.0mA
I
B
= -4.5mA
I
B
= -3.5mA
I
B
= -4.0mA
I
C
[mA], COLLECTOR CURRENT
-80
I
C
[A], COLLECTOR CURRENT
-0.8
I
B
= -3.0mA
I
B
= -2.5mA
I
B
= -150
µ
A
-60
-0.6
I
B
= -2.0mA
I
B
= -1.5mA
I
B
= -100
µ
A
-40
-0.4
I
B
= -1.0mA
I
B
= -0.5mA
I
B
= -50
µ
A
-20
-0.2
0
0
-2
-4
-6
-8
-10
0.0
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
-10
V
CE
= -2V
I
C
= 20 I
B
h
FE
, DC CURRENT GAIN
100
-1
V
BE
(sat)
10
-0.1
V
CE
(sat)
1
-0.01
-0.1
-1
-10
-0.01
-0.01
-0.1
-1
-10
I
C
[mA], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1000
V
CC
= -10V
I
C
= 10I
B1
= -10I
B2
I
E
=0
f = 1MHz
t
ON
, t
STG
, t
F
[
µ
s], TIME
C
ob
[pF], CAPACITANCE
-1
1
100
t
STG
0.1
10
t
F
t
ON
0.01
-0.001
-0.01
-0.1
1
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Switching Time
Figure 6. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A2, January 2002
KSB1116/1116A
Typical Characteristics
(Continued)
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
-10
V
CE
= -2V
I
C
[A], COLLECTOR CURRENT
100
-1
200ms
10
ms
PW
=1
m
s
10
DC
-0.1
1
-0.01
-0.1
-1
-10
-0.01
-1
-10
KSB1116A
-100
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Current Gain Bandwidth Product
Figure 8. Safe Operating Area
0.8
0.7
P
C
[W], POWER DISSIPATION
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
o
75
100
125
150
175
T
a
[ C], AMBIENT TEMPERATURE
Figure 9. Power Derating
©2002 Fairchild Semiconductor Corporation
KSB1116
Rev. A2, January 2002
KSB1116/1116A
Package Demensions
TO-92
4.58
–0.15
+0.25
0.46
14.47
±0.40
±0.10
4.58
±0.20
1.27TYP
[1.27
±0.20
]
3.60
±0.20
1.27TYP
[1.27
±0.20
]
0.38
–0.05
+0.10
3.86MAX
1.02
±0.10
0.38
–0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A2, January 2002
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