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ZDM4306NTC

Description
Small Signal Field-Effect Transistor, 2A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SM-8, 8 PIN
CategoryDiscrete semiconductor    The transistor   
File Size57KB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric View All

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ZDM4306NTC Overview

Small Signal Field-Effect Transistor, 2A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SM-8, 8 PIN

ZDM4306NTC Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)2 A
Maximum drain-source on-resistance0.33 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)30 pF
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power consumption environment3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
SM-8 DUAL N-CHANNEL ENHANCEMENT
MODE MOSFETS
ISSUE 1 - NOVEMBER 1995
ZDM4306N
D
1
D
1
D
2
D
2
PARTMARKING DETAIL – M4306N
G
1
S
1
G
2
S
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
T
j
:T
stg
VALUE
60
2
15
±
20
-55 to +150
UNIT
V
A
A
V
°C
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single die “on”
Both die “on” equally
Derate above 25°C*
Any single die “on”
Both die “on” equally
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
SYMBOL
P
tot
2.5
3.0
20
24
50.0
41.6
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
VALUE
UNIT
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
Note:
This data is derived from development material and does not necessarily mean that the device will
go into production
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