SM-8 BIPOLAR TRANSISTOR H-BRIDGE
PRELIMINARY DATA SHEET ISSUE B - JULY 1997
FEATURES
* Compact package
* Low on state losses
* Low drive requirements
* Operates up to 20V supply
* 2.5 Amp continuous rating
PARTMARKING DETAIL ZHB6718
ZHB6718
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
NPNs
20
20
5
6
2.5
PNPs
-20
-20
-5
-6
-2.5
UNIT
V
V
V
A
A
°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150
SCHEMATIC DIAGRAM
E1, E4
CONNECTION DIAGRAM
C
1,
C
2
B1
Q1
Q4
C1, C2
C3, C4
B2
Q2
Q3
B3
B4
B
1
B
2
E
2
,E
3
B
3
5
E
1
,E
4
C
3
,C
4
B
4
6
7
E2, E3
8
1
2
3
4
ZHB6718
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally
Derate above 25°C*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally
Thermal Resistance - Junction to Ambient*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally
R
th(j-amb)
SYMBOL
P
tot
VALUE
1.25
2
10
16
100
62.5
UNIT
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
100
80
60
40
20
0
100us
D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
t1
tP
D=t1
tP
60
50
40
30
20
10
0
100us
1ms
10ms 100ms
1s
D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
t1
tP
D=t1
tP
1ms
10ms 100ms
Transient Thermal Resistance
Single Transistor "On"
2.0
10
Pulse Width
1s
10s
100s
Transient Thermal Resistance
Q1 and Q3 or Q2 and Q4 "On"
Pulse Width
10s
100s
1.5
Two devices on
Full Copper
1.0
0.5
0
1
Minimum Copper
Single device on
Two devices on
Single device on
0
20
40
T - Temperature (°C)
60
80
100
120
140 160
0.1
0.1
Derating curve
Pd v PCB Area Comparison
Pcb Area (inches squared)
1
10
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
Two devices on is the standard operating condition for the bridge. Eg opposing NPN/PNP pairs
turned on.
ZHB6718
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C ).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
MIN.
20
20
5
TYP.
100
27
8.3
100
100
100
8
70
130
0.89
0.79
200
300
200
100
400
450
360
180
140
23
170
400
30
MHz
pF
ns
ns
15
150
200
1.0
MAX. UNIT
V
V
V
nA
nA
nA
mV
mV
mV
V
V
CONDITIONS.
I
C
=100µA
I
C
=10mA*
I
E
=100µA
V
CB
=16V
V
EB
=4V
V
CES
=16V
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2.5A, I
B
=50mA*
I
C
=2.5A, I
B
=50mA*
I
C
=2.5A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=100mA, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
V
CC
=10V, I
C
=1A
I
B1
=-I
B2
=10mA
Emitter-Base Breakdown V
(BR)EBO
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer
Ratio
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%.
ZHB6718
PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C ).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
MIN.
-20
-20
-5
TYP.
-65
-55
-8.8
-100
-100
-100
-16
-130
-190
-0.98
0.85
300
300
150
35
150
475
450
230
70
30
180
21
40
670
30
MHz
pF
ns
ns
-40
-200
-260
-1.1
MAX. UNIT
V
V
V
nA
nA
nA
mV
mV
mV
V
V
CONDITIONS.
I
C
=-100µA
I
C
=-10mA*
I
E
=-100µA
V
CB
=-15V
V
EB
=-4V
V
CES
=-15V
I
C
=-100mA, I
B
=-10mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-2.5A, I
B
=-200mA*
I
C
=-2.5A, I
B
=-200mA*
I
+
=-2.5A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-100mA, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-4A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, f=1MHz
V
CC
=-10V, I
C
=-1A
I
B1
=I
B2
=-20mA
Emitter-Base Breakdown V
(BR)EBO
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer
Ratio
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%.
ZHB6718
NPN TRANSISTOR
TYPICAL CHARACTERISTICS
1
+25 °C
0.4
I
+
/I
*
=50
100m
0.3
100°C
0.2
10m
I
+
/I
*
=100
I
+
/I
*
=50
I
+
/I
*
=10
25°C
-55°C
0.1
0.0
1mA
10mA
100mA
1A
10A
1m
1m
10m
100m
1
10
I
C
- Collector Current (A)
Collector Current
V
CE(sat)
v I
C
1.2
450
25°C
V
CE(sat)
vs I
C
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100°C
V
+-
=2V
I
+
/I
*
=50
1.0
0.8
0.6
-55°C
25°C
100°C
-55°C
225
0.4
0.2
1mA
10mA
100mA
1A
0
10A
0.0
1mA
10mA
100mA
1A
10A
Collector Current
Collector Current
h
FE
vs I
C
V
BE(sat)
vs I
C
1.0
0.8
0.6
0.4
0.2
V
+-
=2V
-55°C
25°C
100°C
0.0
1mA
10mA
100mA
1A
10A
Collector Current
V
BE(on)
vs I
C
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