ZXMN3B04N8
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
SUMMARY
V
(BR)DSS
=30V : R
DS
(
on
)=0.025 ; I
D
= 8.9A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
SO8
APPLICATIONS
•
DC - DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMN3B04N8TA
ZXMN3B04N8TC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
500 units
2500 units
Top View
DEVICE MARKING
•
ZXMN
3B04
ISSUE 2 - MAY 2004
1
SEMICONDUCTORS
ZXMN3B04N8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-source voltage
Gate source voltage
Continuous drain current
@ V
GS
=4.5V; T
A
=25°C
@ V
GS
=4.5V; T
A
=70°C
(b)
@ V
GS
=4.5V; T
A
=25°C
(a)
Pulsed drain current
(c)
(b)
(b)
SYMBOL
V
DSS
V
GS
I
D
LIMIT
30
12
8.9
7.3
7.2
UNIT
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
°C
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
(c)
45
4.5
45
2
16
3
24
-55 to +150
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
Operating and storage temperature range
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a)
Junction to ambient
(b)
SYMBOL
R
JA
R
JA
VALUE
62.5
41.4
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
ISSUE 2 - MAY 2004
SEMICONDUCTORS
2
ZXMN3B04N8
CHARACTERISTICS
ISSUE 2 - MAY 2004
3
SEMICONDUCTORS
ZXMN3B04N8
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
(1)
Forward transconductance
(1) (3)
DYNAMIC
(3)
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
t
rr
30
0.5
100
0.7
0.021
0.028
24
0.025
0.040
V
A
nA
V
I
D
=250 A, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
= 12V, V
DS
=0V
I =250 A, V
DS
= V
GS
D
V
GS
=4.5V, I
D
=7.2A
V
GS
=2.5V, I
D
=5.7A
S
V
DS
=15V,I
D
=7.2A
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
(2) (3)
2480
318
184
pF
pF
pF
V
DS
=15V, V
GS
=0V,
f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
Reverse recovery time
(3)
Reverse recovery charge
(3)
9
11.5
40
16.6
23.1
4.9
6.2
ns
ns
ns
ns
nC
nC
nC
V
DD
=15V, V
GS
=4.5V
I
D
=1A
R
G
≅6.0
,
V
DS
=15V,V
GS
=4.5V,
I
D
=7.2A
0.85
17.9
10
0.95
V
ns
nC
T
J
=25°C, I
S
=8A,
V
GS
=0V
T
J
=25°C, I
F
=3.2A,
di/dt= 100A/ s
Q
rr
NOTES
(1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - MAY 2004
SEMICONDUCTORS
4
ZXMN3B04N8
TYPICAL CHARACTERISTICS
ISSUE 2 - MAY 2004
5
SEMICONDUCTORS
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