ZXTP2025F
50V, SOT23, PNP medium power transistor
Summary
V
(BR)CEV
> -50V, V
(BR)CEO
> -50V
I
C(cont)
= -5A
R
CE(sat)
= 30m
P
D
= 1.2W
Complementary part number: ZXTN2031F
typical
V
CE(sat)
< - 60mV @ -1A
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally suited
to applications where space is at a premium.
Features
•
•
•
•
•
Higher power dissipation SOT23 package
High peak current
Low saturation voltage
High gain
50V forward blocking voltage
Applications
•
•
•
•
•
MOSFET and IGBT gate driving
Motor drive
Relay, lamp and solenoid drive
High side switches
DC-DC converters
Pinout - top view
Ordering information
Device
ZXTP2025FTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per reel
3,000
Device marking
312
Issue 2 - September 2005
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ZXTP2025F
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
(c)
Base current
Power dissipation @ T
A
=25°C
(a)
Linear derating factor
Power dissipation @ T
A
=25°C
(b)
Linear derating factor
Power dissipation @ T
A
=25°C
(c)
Linear derating factor
Operating and storage temperature
Symbol
V
CBO
V
(BR)CEV
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
P
D
P
D
T
j
:T
stg
Limit
-50
-50
-50
-7.0
-10
-5
-1.2
1.0
8.0
1.2
9.6
1.56
12.5
-55 to +150
Unit
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Symbol
Rθ
JA
Rθ
JA
Rθ
JA
Value
125
104
80
Unit
°C/W
°C/W
°C/W
NOTES:
(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(c) As (b) above measured at t<5secs.
Issue 2 - September 2005
© Zetex Semiconductors plc 2005
2
www.zetex.com
ZXTP2025F
Characteristics
Issue 2 - September 2005
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ZXTP2025F
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector-emitter cut-off
current
Collector-base cut-off current
Emitter-base cut-off current
Static forward current transfer
ratio
Symbol
V
(BR)CBO
V
(BR)CEV
V
(BR)CEO
V
(BR)EBO
I
CEV
I
CBO
I
EBO
H
FE
180
200
70
12
Collector-emitter saturation
voltage
V
CE(sat)
380
350
120
30
-11
-40
-150
-150
Base-emitter saturation
voltage
Base-emitter turn-on voltage
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
V
BE(sat)
-0.81
-0.95
V
BE(on)
f
T
C
obo
t
(d)
t
(r)
t
(stg)
t
(f)
-0.82
190
42
14
23
240
30
2%.
Min.
-50
-50
-50
-7.0
Typ.
100
100
70
8.5
Max.
Unit
V
V
V
V
Conditions
I
C
=-100µA
I
C
=−1µA, 1V>V
BE
>-0.3V
I
C
=-10mA
(a)
I
E
=-100µA
V
CE
=-40V,
V
BE
= 1V
V
CB
=-40V
V
EB
=-6V
I
C
=-10mA, V
CE
=-2V
(a)
I
C
=-500mA, V
CE
=-2V
(a)
Ic=-5A, V
CE
=-2V
(a)
Ic=-10A, V
CE
=-2V
(a)
-20
-20
-10
nA
nA
nA
560
-20
-60
-230
-200
-0.88
-1.05
-0.92
mV
mV
mV
mV
V
V
V
MHz
pF
ns
ns
ns
ns
I
C
=-100mA, I
B
=-10mA
(a)
I
C
=-1A, I
B
=-100mA
(a)
I
C
=-2A, I
B
=-40mA
(a)
I
C
=-5A, I
B
=-500mA
(a)
I
C
=-2A, I
B
=-40mA
(a)
I
C
=-5A, I
B
=-500mA
(a)
I
C
=-5A, V
CE
=-2V
(a)
Ic=-500mA, V
CE
=-10V,
f=50MHz
V
CB
=-10V, f=1MHz
V
CC
=-12V, I
C
=-2.5A,
I
B1
=I
B2
=-125mA
NOTES:
(a) Measured under pulsed conditions. Pulse width=300 S. Duty cycle
Issue 2 - September 2005
© Zetex Semiconductors plc 2005
4
www.zetex.com
ZXTP2025F
Typical characteristics
Issue 2 - September 2005
© Zetex Semiconductors plc 2005
5
www.zetex.com
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