ZVP1320ASTOB datasheet, PDF - EEWORLD Datasheet

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ZVP1320ASTOB: DescriptionSmall Signal Field-Effect Transistor, 0.07A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size113KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZVP1320ASTOB Overview

Small Signal Field-Effect Transistor, 0.07A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZVP1320ASTOB Parametric

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	0.07 A
Maximum drain-source on-resistance	80 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 MARCH 94

FEATURES

* 200 Volt V

DS

* R

DS(on)

=80Ω

ZVP1320A

D

G

S

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

DS

I

D

I

DM

V

GS

P

tot

T

j

:T

stg

E-Line

TO92 Compatible

VALUE

-200

-70

-400

±

20

UNIT

V

mA

V

mW

°C

625

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

SYMBOL MIN.

BV

DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

-100

80

25

50

15

5

8

16

-200

-1.5

-3.5

20

-10

-50

MAX. UNIT CONDITIONS.

V

nA

µ

A

µ

A

I

D

=-1mA, V

GS

=0V

ID=-1mA, V

DS

= V

GS

V

GS

=

±

20V, V

DS

=0V

V

DS

=-200 V, V

GS

=0

V

DS

=-160 V, V

GS

=0V,

T=125°C

(2)

V

DS

=-25 V, V

GS

=-10V

V

GS

=-10V,I

D

=-50mA

V

DS

=-25V,I

D

=-50mA

mA

Ω

Static Drain-Source On-State R

DS(on)

Resistance (1)

Forward Transconductance

(1)(2)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer

Capacitance (2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

mS

pF

ns

V

DS

=-25 V, V

GS

=0V, f=1MHz

V

DD

≈

-25V, I

D

=-50mA

(1) Measured under pulsed conditions. Width=300

µ

s. Duty cycle

≤

2%

(2) Sample test.

3-414

(

3

ZVP1320ASTOB Related Products

	ZVP1320ASTOB	ZVP1320ASTZ	ZVP1320ASTOA
Description	Small Signal Field-Effect Transistor, 0.07A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Field-Effect Transistor, 0.07A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Field-Effect Transistor, 0.07A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	200 V	200 V	200 V
Maximum drain current (ID)	0.07 A	0.07 A	0.07 A
Maximum drain-source on-resistance	80 Ω	80 Ω	80 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	-

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