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ZVN2110CSTOF

Description
Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size22KB,1 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

ZVN2110CSTOF Overview

Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, E-LINE PACKAGE-3

ZVN2110CSTOF Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)0.32 A
Maximum drain-source on-resistance4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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