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26JB12000A

Description
35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size67KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

26JB12000A Overview

35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

26JB12000A Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Maximum average input current35 A
Processing package descriptionMODULE-4
stateTRANSFERRED
packaging shapeSQUARE
Package SizeFLANGE MOUNT
Terminal formSOLDER LUG
terminal coatingNOT SPECIFIED
Terminal locationUPPER
Packaging MaterialsPLASTIC/EPOXY
structureBRIDGE, 4 ELEMENTS
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Phase1
Maximum repetitive peak reverse voltage1000 V
Maximum non-repetitive peak forward current500 A
Bulletin I2715 rev. E 08/97
MB
&
JB SERIES
SINGLE PHASE BRIDGE
Features
Universal, 3 way terminals:
push-on, wrap around or solder
High thermal conductivity package,
electrically insulated case
Center hole fixing
Excellent power/volume ratio
UL E 62320 approved
Power Modules
10 A
25 A
35 A
Description
A range of extremely compact, encapsulated single
phase bridge rectifiers offering efficient and reliable
operation. They are intended for use in general
purpose and instrumentation applications.
Major Ratings and Characteristics
Parameters 100JB-L 26MB-A 36MB-A
250JB-L 35MB-A
I
O
@ T
C
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
range
T
J
10
65
148
155
110
100
25
65
400
420
790
725
50 to 1600
-40 to 150
35
60
475
500
1130
1030
Units
A
o
C
A
A
A
2
s
A
2
s
V
o
C
www.irf.com
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