THIS DOCUMENT IS FOR MAINTENANCE
PURPOSES ONLY AND IS NOT
RECOMMENDED FOR NEW DESIGNS
SEPTEMBER 1993
PRELIMINARY INFORMATION
3047-3.2
SL6442
1GHZ AMPLIFIER/MIXER
(Supersedes May 1992 Edition)
The SL6442 UHF Amplifier and Mixer is designed for use in
cordless telephones, cellular telephones, pagers and low-
power receivers operating at frequencies up to 1GHz. It
contains a low noise amplifier (LNA) with AGC facility and two
mixers for use in I and Q direct conversion receivers or image
cancelling in superheterodyne receivers.
Operating from a single supply of 5V, the SL6442 requires
a current of 4.6mA (typ.) when powered up and only 11µA (typ.)
when powered down using the battery economy facility.
RF V
CC
V
BIAS
RF INPUT (CB)
RF INPUT (CE)
RF DECOUPLE
RF OUTPUT
RF GROUND
MIXER INPUT
BANDGAP REF (V
BG
)
BATTERY ECONOMY
1
20
2
19
3
18
4
17
5
16
SL6442
6
15
7
14
8
13
9
12
10
11
AGC
AGC DECOUPLE
MIXER DECOUPLE
V
CC
LO DECOUPLE
MIXER B OUTPUT
LO B INPUT
LO A INPUT
GROUND
MIXER A OUTPUT
FEATURES
s
1GHz Operation
MP20
Fig.1 Pin connections - top view
s
s
s
s
s
Very Low Power
Suitable for Direct Conversion or Superhet Systems
On-Chip RF Amplifier
Power Down Facility for Battery Economy
AGC Capability
ABSOLUTE MAXIMUM RATINGS
Supply voltage
Storage temperature
Operating temperature
8V
255°C
to1150°C
0°C to
170°C
ORDERING INFORMATION
SL6442 NA MP
Miniature Plastic DIL Package
This device has static-sensitive terminations, sensitivity
measured as typically 400V using MIL-STD-883 Method 3015.
Therefore, ESD handling precautions are essential in order to
avoid degradation of performance or permanent damage to
the device.
15V
RF
V
CC
1
15V
RF
OUTPUT
6
MIXER
INPUT
8
V
CC
17
MIXER A
20
4k
4k
11
AGC
GAIN
CONTROL
MIXER B
RF
BIAS
RF
AMPLIFIER
MIXER A
OUTPUT
15
MIXER B
OUTPUT
7
4
3
13
14
12
RF
GROUND
CE
INPUT
CB
INPUT
LOCAL
OSCILLATOR A
INPUT
LOCAL
OSCILLATOR B
INPUT
Fig.2 block diagram
SL6442
AGC
DECOUPLE
19
RF V
CC
1
RF O/P
6
V
CC
17
20
AGC
AGC
BUFFER
AMP
AGC
BIAS 2
BIAS 1
7
4
3
2
12
RF GND
CE
INPUT
CB
INPUT
V
BIAS
GND
Fig.3 Circuit schematic of LNA
17
VCC
4k
11
4k
15
MIXER A OUTPUT
13
MIXER B OUTPUT
LO B INPUT
LO A INPUT
100
100
14
BIAS
MIXER
INPUT STAGE
12
16
LO DECOUPLE
8
MIXER INPUT
18
MIXER DECOUPLE
GROUND
Fig.4 Circuit schematic of mixer
PIN DESCRIPTIONS
Pin no.
1
2
3
Name
RF V
CC
V
BIAS
RF input (CB)
Description
Power supply to the RF amplifier. Normally connected to
15V,
it should be adequately
bypassed.
A 1·6V bias source capable of supplying up to 0·5mA.
Common base input to the emitter of the RF transistor. It should be returned to ground for
DC using an RF choke or tuned circuit when in common base mode. In common emitter mode
it should be connected directly to ground.
Common emitter input to the base of the RF transistor. It is DC biased internally but should
be decoupled in common base mode.
Decoupling of DC bias line.
Output port of the RF amplifier. It should be returned to +5V via an RF load. A current of 2mA
will flow if pin 20 (AGC) is connected to pin 9 (V
BG
).
4
5
6
RF input (CE)
RF decouple
RF output
2
SL6442
PIN DESCRIPTIONS (Continued)
Pin no.
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Name
RF ground
Mixer input
Bandgap ref. (V
BG
)
Battery economy
Mixer A output
Ground
Local osc. A input
Local osc. B input
Mixer B output
LO decouple
V
CC
Mixer decouple
AGC decouple
AGC
Description
A separate ground is provided for the RF amplifier to improve stability.
This is coupled externally to the output of the RF amplifier (pin 6). It should be decoupled to
V
BIAS
via an RF choke.
Temperature compensated DC reference voltage. It should not be loaded.
Turns device ‘off’ when HIGH (>3V), ‘on’ when LOW (<1·5V).
The output impedance is about 4kΩ; quiescent voltage is approximately 4V (V
CC
=5V).
Mixer and biasing ground.
Input level of
210dBm.
DC level is approximately 2·3V.
Input level of
210dBm.
DC level is approximately 2·3V.
The output impedance is about 4kΩ; quiescent voltage is approximately 4V (V
CC
=5V).
Decoupling of DC bias line.
15V
supply; it should be bypassed effectively.
Decoupling of DC bias line.
Decoupling of AGC input line.
Varies RF amplifier gain. Gain reduces with increasing voltage, with RF gain reduced by 6dB
when AGC=V
BIAS
. Full range of AGC requires only typically 300mV DC range (see Fig. 9).
This pin should be connected to V
BG
if the AGC facility is not required.
ELECTRICAL CHARACTERISTICS
These characteristics are guaranteed over the following conditions unless otherwise stated:
T
AMB
=25°C, V
CC
=4·5V and at V
CC
=6·5V
Value
Characteristic
Total supply current
Total supply current (economised)
Battery economiser input current
Total RF amplifier current
Maximum RF amplifier current
Minimum RF amplifier current
AGC amplifier offset voltage
Bandgap voltage, V
BG
V
BIAS
V
BIAS
supply regulation
V
BIAS
load regulation
Mixer conversion gain
Pin
Min.
1, 6, 11, 15, 17
1, 6, 11, 15, 17
10
1, 5
6
6
20, 19
9
2
2
2
11, 15
3·5
Typ.
4·6
11·0
Max.
mA
µA
µA
mA
mA
µA
mV
V
V
mV
mV
dB
Pin 10 at 0V
Pin 10 at V
CC
5·5
15·0
21·0
11·0
2·0
2·75
2·0
2·75
10·0
220·0
0
120·0
1·00 1·23
1·40
1·40 1·64
1·80
124·0 150
217·0 250
10·0
12·7
16·0
Units
Conditions
V
AGC
=1·2V
V
AGC
=2·0V
Step V
CC
from 4·50V to 5·50V,
Step load from 0mA to 0·5mA,
f
CARRIER
=50MHz at
210dBm,
f
SIGNAL
=50·01MHz at
234dBm,
IF=10kHz, Z
L
(EXT)=1MΩ//20pF
f
CARRIER
=50MHz at
210dBm,
f
SIGNAL
=50·01MHz at
234dBm,
IF=10kHz, Z
L
(EXT)=1MΩ//20pF
Mixer A/B gain match
11, 15
21·0
0
11·0
dB
NOTE: Typical figures are for a V
CC
of 5·0V
3
SL6442
ELECTRICAL CHARACTERISTICS OF THE SL6442 DEMONSTRATION BOARD (PAGES 8-10)
These characteristics are guaranteed over the following conditions unless otherwise stated:
T
AMB
= 25° C, V
CC
=5·0V, V
AGC
= V
BG
, LO =
25dBm,
Input/Output = 50Ω, f
IN
= 950MHz, f
LO
= 930MHz (IF = 20MHz),
f
LO
= 949·990MHz (IF = 10kHz)
Overall performance
Noise figure
Third order input intercept
Power gain
Voltage gain
Typ.
8·3
222
7·5
30
Units
dB
dBm
dB
dB
Conditions
DSB (20MHz IF)
20MHz IF
20MHz IF
Z
L
> 100kΩ , IF = 10kHz
NOTE: Refer to Figs. 5, 6 and 7 for typical performance of overall low noise amplifier and mixer configuration (demonstration board) across
temperature and supply voltage 4·0V, 5·0V and 7·0V).
SUPPLEMENTARY INFORMATION
Value
Characteristic
Pin
Min.
Operating supply voltage range
RF Amplifier Common emitter
Power gain
AGC range
Input intercept
1dB gain compression
Noise figure
Input impedance
Optimum operating frequency range
Mixers (950MHz)
Voltage conversion gain
Power conversion gain
LO drive level
Input intercept point
1dB gain compression
Mixer ‘A’ to Mixer ‘B’ gain input match
Mixer ‘A’ to Mixer ‘B’ phase input match
Input impedance
Noise figure
Optimum operating
frequency range
4·5
Typ.
5·0
14
25
29
223
4·5
400
19
27
13,14
8
210
26
212
±1·0
±4
21
8
1000
1000
Max.
6·5
V
dB
dB
dBm
dBm
dB
MHz
dB
dB
dBm
dBm
dBm
dB
deg
dB
MHz
Low frequency operation
dependent on external
components.
Can be extended by external
tuned circuit.
All ports terminated with 50Ω
All ports terminated with 50Ω
All ports terminated with 50Ω
All ports terminated with 50Ω
At IF = 50kHz, matched input.
At IF = 20kHz. Matched input
and output.
Measured at pins 13 and 14.
Third order.
At input
Equal LO level at pins 13 and 14
LO inputs 90
±
0·1° phase
See Fig. 10.
Matched input and output.
V
BIAS
±150mV
typ. (see Fig. 9).
Third order.
At input
Common emitter.
See Fig. 8.
Units
Conditions
20
4
IF output bandwidth
Output impedance
Isolation LO to mix RF I/P
Reverse isolation of RF amp
Isolation LO to IF
Isolation RF to IF
11,15
20
4
25
14
50
37
MHz
kΩ
dB
dB
dB
dB
4
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