EEWORLDEEWORLDEEWORLD

Part Number

Search

UP04210G

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI6-F2, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size479KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric Compare View All

UP04210G Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI6-F2, 6 PIN

UP04210G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-F6
JESD-609 codee6
Humidity sensitivity level1
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
UP04210G
Silicon NPN epitaxial planar type
For switching/digital circuits
Features
elements incorporated into one package (Transistors with built-in resistor)
Two
Reduction of the mounting area and assembly cost by one half
Package
Code
SSMini6-F2
Name
Pin
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
M
ain
Di
sc te
on na
tin nc
ue e/
d
Basic Part Number
UNR2210
×
2
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
stg
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Rating
50
50
Unit
V
V
Absolute Maximum Ratings
T
a
= 25°C
Marking Symbol: 8Z
Internal Connection
R1
47 kΩ
100
125
125
mA
°C
°C
(C1) (B2) (E2)
6
5
4
Tr1
mW
R1
47 kΩ
Tr2
–55 to +125
1
2
3
(E1) (B1) (C2)
Conditions
Min
50
50
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
MHz
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
Output voltage high-level
Output voltage low-level
Input resistance
Transition frequency
Ma
int
en
Collector-emitter saturation voltage
an
ce
Forward current transfer ratio
/D
Emitter-base cutoff current (Collector open)
isc
on
Collector-emitter cutoff current (Base open)
tin
Collector-base cutoff current (Emitter open)
ue
di
V
CB
= 50 V, I
E
= 0
0.1
0.5
V
CE
= 50 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
0.01
460
V
CE
= 10 V, I
C
= 5 mA
160
4.9
V
CE(sat)
V
OH
V
OL
R
1
f
T
I
C
= 10 mA, I
B
= 0.3 mA
0.25
0.2
V
CC
= 5 V, V
B
= 0.5 V, R
L
= 1 kΩ
V
CC
= 5 V, V
B
= 2.5 V, R
L
= 1 kΩ
Pl
–30%
47
+30%
V
CB
= 10 V, I
E
= –2 mA, f = 200 MHz
150
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2007
SJJ00406AED
1

UP04210G Related Products

UP04210G UP04210G0L
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI6-F2, 6 PIN TRANS PREBIAS DUAL NPN SSMINI5
Download the white paper "Magnetic scale-based magnetoresistive sensor systems" to learn about the various applications of AMR position sensors
[font=微软雅黑][size=3][color=#ff8c00][b]Download White Paper[/b][/color][/size][/font] [font=微软雅黑][size=3]Introduction: Magnetoresistive angle displacement sensors are widely used in industrial motors to...
EEWORLD社区 Sensor
Drawing Tools
Can you share what drawing tools you use? [[i] This post was last edited by gaoxiao on 2009-6-20 11:21 [/i]]...
gaoxiao Microcontroller MCU
The Four Levels of Analog Chip DesignZHUAN
I have been working for five years since I started studying analog chip design at Fudan University. It has been eight years. During this time, I have listened to the advice of many experts at home and...
liuyong1989 Power technology
Upgraded personal idle computer parts i5-4670K, Gigabyte Z87 motherboard, G.Skill 16G memory, HD7850 graphics card
I wanted to upgrade my computer last year, but the prices of motherboards, CPUs, and especially memory have doubled and skyrocketed. I have been waiting for a year, but the memory has not returned to ...
jackfrost Buy&Sell
3.3V and 5V system connection tips
3.3V and 5V system connection tips3.3V and 5V system connection tips...
linda_xia Analog electronics
Anlu SparkRoad domestic FPGA evaluation [Problem feedback] The top-level file suddenly disappeared
I wrote the project yesterday, and the functions have been verified to be normal. I am going to add some comments today. I don't know when the top-level file suddenly disappeared. I can't add it in. T...
1nnocent Domestic Chip Exchange

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1640  1289  1632  2235  2781  34  26  33  46  56 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号