SBL25LxxCT, SBLF25LxxCT & SBLB25LxxCT Series
Vishay Semiconductors
formerly General Semiconductor
Dual Low V
F
Schottky Rectifier
Reverse Voltage
20 to 30V
Forward Current
25A
ITO-220AB (SBLF25LxxCT)
0.405 (10.27)
0.383 (9.72)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.140 (3.56)
DIA.
0.130 (3.30)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.370 (9.40)
0.360 (9.14)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
1
0.160 (4.06)
0.140 (3.56)
PIN
2
3
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.055 (1.39)
0.045 (1.14)
1
TO-220AB (SBL25LxxCT)
0.415 (10.54) MAX.
0.600 (15.5)
0.580 (14.5)
PIN
2
3
0.131 (3.39)
DIA.
0.122 (3.08)
0.676 (17.2)
0.646 (16.4)
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.060 (1.52)
PIN 1
PIN 3
PIN 2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
0.110 (2.80)
0.100 (2.54)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
PIN 1
PIN 3
PIN 2
CASE
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
TO-263AB (SBLB25LxxCT)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN
K
0.055 (1.40)
0.047 (1.19)
0.624 (15.85)
1
K
2
0.591 (15.00)
0-0.01 (0-0.254)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout TO-263AB
0.42
(10.66)
0.360 (9.14)
0.33
(8.38)
0.63
(17.02)
0.320 (8.13)
Dimensions in inches
and (millimeters)
0.110 (2.79)
0.090 (2.29)
0.037 (0.940)
0.027 (0.686)
PIN 1
PIN 2
K - HEATSINK
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.08
(2.032)
0.24
(6.096)
0.105 (2.67)
0.12
(3.05)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Features
•
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
•
Dual rectifier construction, positive center tap
•
Metal silicon junction, majority carrier conduction
•
Low power loss, high efficiency
•
Guardring for overvoltage protection
•
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
•
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
Document Number 88731
22-Oct-02
Mechanical Data
Case:
JEDEC TO-220AB, ITO-220AB & TO-263AB
molded plastic body
Terminals:
Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
10 in-lbs maximum
Weight:
0.08 oz., 2.24 g
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SBL25LxxCT, SBLF25LxxCT & SBLB25LxxCT Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
Parameter
(T
C
= 25°C unless otherwise noted)
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
SBL25L20CT SBL25L25CT SBL25L30CT
20
14
20
25
17
25
25
12.5
180
–40 to +125
4500
(NOTE 1)
3500
(NOTE 2)
1500
(NOTE 3)
30
21
30
Unit
V
V
V
A
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Total device
at TC = 95°C
per leg
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) per leg
Operating junction and storage temperature range
RMS Isolation voltage (SBLF type only) from terminals to
heatsink with t = 1.0 second, RH
≤
30%
I
FSM
T
J
, T
STG
V
ISOL
A
°C
V
Electrical Characteristics
(T
Parameter
Maximum instantaneous forward voltage
per leg at 12.5A
(NOTE 4)
C
= 25°C unless otherwise noted)
Symbol
T
C
= 125°C
T
C
= 25°C
V
F
I
R
Value
0.39
0.49
0.90
50
100
Unit
V
mA
Maximum instantaneous reverse current
T
C
= 25°C
at rated DC blocking voltage per leg
(NOTE 4)
T
C
= 100°C
T
C
= 125°C
Thermal Characteristics
(T
Parameter
C
= 25°C unless otherwise noted)
Symbol
R
ΘJC
SBL
1.5
SBLF
4.0
SBLB
1.5
Unit
°C/W
Typical thermal resistance from junction to case per leg
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
≤
4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
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Document Number 88731
22-Oct-02
SBL25LxxCT, SBLF25LxxCT & SBLB25LxxCT Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
25
Resistive or Inductive Load
300
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Current (A)
20
250
200
150
15
10
100
50
0
5
0
0
50
100
150
1
10
100
Case Temperature (
°
C)
Number of Cycles at 60 H
Z
Fig. 3 - Typical Instantaneous
Forward Characteristics Per Leg
I
R
— Instantaneous Reverse Current (mA)
I
F
— Instantaneous Forward Current (A)
50
T
J
= 150°C
Pulse Width = 300µs
1% Duty Cycle
Fig. 4 - Typical Reverse Characteristics Per Leg
50
T
J
= 125°C
10
10
75°C
1.0
1.0
T
J
= 25°C
0.1
25°C
0.01
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.001
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction Capacitance Per Leg
4,000
100
Fig. 6 - Typical Transient
Thermal Impedance Per Leg
Transient Thermal Impedance (°C/W)
pF — Junction Capacitance
T
J
= 25°C
f = 1.0 MH
Z
V
sig
= 50mVp-p
1,000
10
1
100
0.1
1
10
100
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
t — Pulse Duration (sec.)
Document Number 88731
22-Oct-02
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