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FDD8444 N-Channel PowerTrench
®
MOSFET
June 2007
FDD8444
®
N-Channel PowerTrench MOSFET
40V, 50A, 5.2mΩ
Features
Typ r
DS(on)
= 4mΩ at V
GS
= 10V, I
D
= 50A
Typ Q
g(10)
= 89nC at V
GS
= 10V
Low Miller Charge
Low Q
rr
Body Diode
UIS Capability (Single Pulse/ Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
REE
I
DF
tm
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Transmission
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
©2006 Fairchild Semiconductor Corporation
FDD8444
Rev
B (W)
LE
A
M
E
N
TA
TIO
L
E
N
MP
1
www.fairchildsemi.com
FDD8444 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
Drain to Source Voltage
V
GS
I
D
E
AS
P
D
Gate to Source Voltage
Drain Current Continuous (V
GS
= 10V)
Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25
o
C
Parameter
Ratings
40
±20
(Note 1)
145
20
Figure 4
(Note 2)
535
153
1.02
-55 to +175
Units
V
V
A
mJ
W
W/
o
C
o
C
Continuous (V
GS
= 10V, with R
θJA
= 52 C/W)
o
T
J
, T
STG
Operating and Storage Temperature
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient TO-252, 1in copper pad area
2
0.98
52
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDD8444
Device
FDD8444
Package
TO-252AA
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250μA, V
GS
= 0V
V
DS
= 32V
V
GS
= 0V
V
GS
= ±20V
T
J
= 150 C
o
40
-
-
-
-
-
-
-
-
1
250
±100
V
μA
nA
On Characteristics
V
GS(th)
r
DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250μA
I
D
= 50A, V
GS
= 10V
I
D
= 50A, V
GS
= 10V,
T
J
= 175
o
C
2
-
-
2.5
4
7.2
4
5.2
9.4
mΩ
V
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
f = 1MHz
V
GS
= 0 to 10V
V
GS
= 0 to 5V
V
GS
= 0 to 2V
V
DD
= 20V
I
D
= 50A
I
g
= 1.0mA
-
-
-
-
-
-
-
-
-
6195
585
332
1.9
89
43
11
23
11
20
-
-
-
-
116
56
14.3
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
nC
FDD8444
Rev
B (W)
2
www.fairchildsemi.com
FDD8444 N-Channel PowerTrench
®
MOSFET
Electrical Characteristics
T
J
= 25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t
on
t
d(on)
t
r
t
d(off)
t
f
t
off
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
V
DD
= 20V, I
D
= 50A
V
GS
= 10V, R
GS
= 2Ω
-
-
-
-
-
-
-
12
78
48
15
-
135
-
-
-
-
95
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 50A
I
SD
= 25A
I
F
= 50A, dI
F
/dt = 100A/μs
-
-
-
-
0.9
0.8
39
45
1.25
1.0
51
59
V
ns
nC
Notes:
1:
Package current limitation is 50A.
2:
Starting T
J
= 25
o
C, L = 0.67mH, I
AS
= 40A
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDD8444
Rev
B (W)
3
www.fairchildsemi.com
FDD8444 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
POWER DISSIPATION MULIPLIER
1.2
1.0
0.8
0.6
0.4
0.2
0.0
160
140
I
D
, DRAIN CURRENT (A)
CURRENT LIMITED
BY PACKAGE
V
GS
= 10V
120
100
80
60
40
20
0
25
50
75
100
125
150
o
C
)
T
C
, CASE TEMPERATURE
(
175
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE
(
o
C
)
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JC
DUTY CYCLE - DESCENDING ORDER
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
0.01
-5
10
SINGLE PULSE
10
-4
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
1000
I
DM
,
PEAK CURRENT (A)
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
10
0
10
1
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
100
10
-5
10
SINGLE PULSE
10
-4
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
10
0
10
1
Figure 4. Peak Current Capability
FDD8444
Rev
B (W)
4
www.fairchildsemi.com
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