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24LCS22AT-I/SN

Description
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Categorystorage    storage   
File Size347KB,26 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
Download Datasheet Download user manual Parametric Compare View All

24LCS22AT-I/SN Overview

256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8

24LCS22AT-I/SN Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOIC
package instruction3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Factory Lead Time12 weeks
Maximum clock frequency (fCLK)0.1 MHz
Data retention time - minimum200
Durability1000000 Write/Erase Cycles
I2C control byte1010000R
JESD-30 codeR-PDSO-G8
JESD-609 codee3
length4.9 mm
memory density2048 bi
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals8
word count256 words
character code256
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256X8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
power supply3/5 V
Certification statusNot Qualified
Maximum seat height1.75 mm
Serial bus typeI2C
Maximum standby current0.00003 A
Maximum slew rate0.003 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width3.9 mm
Maximum write cycle time (tWC)10 ms
write protectHARDWARE
Base Number Matches1
24LCS22A
2K VESA
®
E-EDID
Serial EEPROM
Features:
• Single Supply with Operation down to 2.5V
• Supports Enhanced EDID
(E-EDID
) 1.3
• Completely Implements DDC1
/DDC2
Inter-
face for Monitor Identification, including Recovery
to DDC1
• 2 Kbit Serial EEPROM Low-Power CMOS
Technology:
- 1 mA active current, typical
- 10
μA
standby current, typical at 5.5V
• 2-Wire Serial Interface Bus, I
2
C
Compatible
• 100 kHz (2.5V) and 400 kHz (5V) Compatibility
• Self-Timed Write Cycle (including Auto-Erase)
• Hardware Write-Protect Pin
• Page Write Buffer for up to Eight Bytes
• 1,000,000 Erase Write Cycles
• Data Retention >200 years
• ESD Protection >4000V
• 8-pin PDIP and SOIC Packages
• Available Temperature Ranges:
- Industrial (I)
-40°C to +85°C
• Pb-Free and RoHS Compliant
Package Types
PDIP/SOIC
*NC
*NC
WP
V
SS
1
24LCS22A
2
3
4
8
7
6
5
V
CC
VCLK
SCL
SDA
* Pins labeled ‘NC’ have no internal connection
Block Diagram
WP
HV Generator
I/O
Control
Logic
Memory
Control
Logic
XDEC
EEPROM
Array
Page Latches
Description:
The Microchip Technology Inc. 24LCS22A is a 256 x 8-bit
dual-mode Electrically Erasable PROM (EEPROM). This
device is designed for use in applications requiring
storage and serial transmission of configuration and
control information. Two modes of operation have been
implemented: Transmit-Only mode (1 Kbit) and
Bidirectional mode (2 Kbit). Upon power-up, the device
will be in the Transmit-Only mode, sending a serial bit
stream of the memory array from 00h to 7Fh, clocked by
the VCLK pin. A valid high-to-low transition on the SCL pin
will cause the device to enter the Transition mode, and
look for a valid control byte on the I
2
C bus. If it detects a
valid control byte from the master, it will switch into
Bidirectional mode, with byte selectable read/write
capability of the entire 2K memory array using SCL. If no
control byte is received, the device will revert to the Trans-
mit-Only mode after it receives 128 consecutive VCLK
pulses while the SCL pin is idle. The 24LCS22A is avail-
able in standard 8-pin PDIP and SOIC packages. The
24LCS22A features a flexible write-protect pin which is
enabled by writing to address 7Fh (usually the checksum
in VESA
®
applications.
SDA
SCL
YDEC
VCLK
Vcc
Vss
Sense Amp.
R/W Control
©
2009 Microchip Technology Inc.
DS21682E-page 1

24LCS22AT-I/SN Related Products

24LCS22AT-I/SN 24LCS22AT-I/P 24LCS22A_09 24LCS22AT 24LCS22A 24LCS22A-I/P
Description 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
memory width 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1
Number of terminals 8 8 8 8 8 8
Maximum operating temperature 85 °C 85 Cel 85 Cel 85 Cel 85 Cel 85 °C
Minimum operating temperature -40 °C -40 Cel -40 Cel -40 Cel -40 Cel -40 °C
organize 256X8 256 X 8 256 X 8 256 X 8 256 X 8 256X8
surface mount YES Yes Yes Yes Yes NO
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum supply/operating voltage - 5.5 V 5.5 V 5.5 V 5.5 V -
Minimum supply/operating voltage - 2.5 V 2.5 V 2.5 V 2.5 V -
Rated supply voltage - 3 V 3 V 3 V 3 V -
maximum clock frequency - 0.1000 MHz 0.1000 MHz 0.1000 MHz 0.1000 MHz -
Processing package description - 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 -
Lead-free - Yes Yes Yes Yes -
EU RoHS regulations - Yes Yes Yes Yes -
China RoHS regulations - Yes Yes Yes Yes -
state - ACTIVE ACTIVE ACTIVE ACTIVE -
Craftsmanship - CMOS CMOS CMOS CMOS -
packaging shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package Size - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
Terminal spacing - 1.27 mm 1.27 mm 1.27 mm 1.27 mm -
terminal coating - MATTE TIN MATTE TIN MATTE TIN MATTE TIN -
Packaging Materials - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
storage density - 2048 deg 2048 deg 2048 deg 2048 deg -
operating mode - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS -
Number of digits - 256 256 256 256 -
Memory IC type - I2C/2-WIRE SERIAL EEPROM I2C/2-WIRE SERIAL EEPROM I2C/2-WIRE SERIAL EEPROM I2C/2-WIRE SERIAL EEPROM -
serial parallel - SERIAL SERIAL SERIAL SERIAL -
Maximum TWC of write cycle - 10 ms 10 ms 10 ms 10 ms -
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