MITSUBISHI Nch POWER MOSFET
FS10VSH-06
HIGH-SPEED SWITCHING USE
FS10VSH-06
OUTLINE DRAWING
1.5MAX.
r
10.5MAX.
Dimensions in mm
4.5
1.3
1.5MAX.
8.6
±
0.3
9.8
±
0.5
3.0
+0.3
–0.5
0
–0
+0.3
1
5
0.8
B
0.5
q w e
wr
2.6
±
0.4
¡2.5V
DRIVE
¡V
DSS ..................................................................................
60V
¡r
DS (ON) (MAX) ..............................................................
73mΩ
¡I
D .........................................................................................
10A
¡Integrated
Fast Recovery Diode (TYP.)
.............
55ns
q
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
e
TO-220S
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Typical value
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
60
±10
10
40
10
10
40
30
–55 ~ +150
–55 ~ +150
1.2
4.5
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
L = 100µH
(1.5)
MITSUBISHI Nch POWER MOSFET
FS10VSH-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
Parameter
(Tch = 25°C)
Test conditions
I
D
= 1mA, V
GS
= 0V
V
GS
=
±10V,
V
DS
= 0V
V
DS
= 60V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 5A, V
GS
= 4V
I
D
= 5A, V
GS
= 2.5V
I
D
= 5A, V
GS
= 4V
I
D
= 5A, V
DS
= 5V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
Limits
Min.
60
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
0.9
54
64
0.27
18
1150
185
80
19
45
90
65
1.0
—
55
Max.
—
±0.1
0.1
1.2
73
95
0.365
—
—
—
—
—
—
—
—
1.5
4.17
—
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= 30V, I
D
= 5A, V
GS
= 4V, R
GEN
= R
GS
= 50Ω
I
S
= 5A, V
GS
= 0V
Channel to case
I
S
= 10A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
tw = 10ms
40
100ms
1ms
10ms
DC
30
20
10
0
0
50
100
150
200
10
–1
7
5
T
C
= 25°C
3
Single Pulse
2
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
V
GS
= 5V 4V 3V 2.5V
Tc = 25°C
Pulse Test
2V
CASE TEMPERATURE T
C
(°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
V
GS
= 5V 4V 3V
Tc = 25°C
Pulse Test
2.5V
DRAIN CURRENT I
D
(A)
16
DRAIN CURRENT I
D
(A)
P
D
= 30W
8
12
2V
6
8
4
1.5V
4
1.5V
2
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VSH-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
Tc = 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
T
C
= 25°C
Pulse Test
V
GS
= 2.5V
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
1.6
80
1.2
I
D
= 15A
10A
60
4V
0.8
40
0.4
5A
20
0
0
0
1.0
2.0
3.0
4.0
5.0
3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN CURRENT I
D
(A)
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
Tc = 25°C
V
DS
= 10V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10
2
7
5
4
3
2
10
1
7
5
4
3
2
T
C
= 25°C
75°C
125°C
V
DS
= 5V
Pulse Test
DRAIN CURRENT I
D
(A)
24
16
8
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
32
0
0
1.0
2.0
3.0
4.0
5.0
10
0 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10
4
7
5
3
2
10
3
7
5
3
2
10
2
7
5
3
Tch = 25°C
2
f = 1MH
Z
V
GS
= 0V
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
t
d(off)
t
f
t
r
t
d(on)
Tch = 25°C
V
DD
= 30V
V
GS
= 4V
R
GEN
= R
GS
= 50Ω
Ciss
Coss
Crss
10
1
3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
2 3 4 5 7 10
1
2 3 4 5 7 10
2
DRAIN CURRENT I
D
(A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VSH-06
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
V
DS
= 10V
V
GS
= 0V
Pulse Test
GATE-SOURCE VOLTAGE V
GS
(V)
5.0
Tch = 25°C
I
D
= 10A
4.0
SOURCE CURRENT I
S
(A)
32
T
C
= 125°C
3.0
20V
40V
24
75°C
25°C
2.0
16
1.0
8
0
0
4
8
12
16
20
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
7
V
GS
= 4V
I
D
= 1/2I
D
5
Pulse Test
4
3
2
10
0
7
5
4
3
2
10
–1
–50
0
50
100
150
2.0
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
V
DS
= 10V
I
D
= 1mA
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
1.6
1.2
0.8
0.4
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch–c)
(°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= 1mA
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
2
7
5
3
2
10
1
7
5
D = 1.0
3
0.5
2
0.2
1.2
1.0
0.8
P
DM
0.1
0.05
0.02
0.01
Single Pulse
tw
T
D
=
tw
T
0.6
10
0
7
5
3
2
0.4
–50
0
50
100
150
10
–1 –4
10 2 3 5710
–3
2 3 5710
–2
2 3 5710
–1
2 3 5710
0
2 3 5710
1
2 3 5710
2
PULSE WIDTH t
w
(s)
Feb.1999
CHANNEL TEMPERATURE Tch (°C)
京公网安备 11010802033920号
EEWORLD
