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FS10VSH-06

Description
Power Field-Effect Transistor, 10A I(D), 60V, 0.073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size54KB,1 Pages
ManufacturerPOWEREX
Websitehttp://www.pwrx.com/Home.aspx
Download Datasheet Parametric View All

FS10VSH-06 Overview

Power Field-Effect Transistor, 10A I(D), 60V, 0.073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

FS10VSH-06 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-220S
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)10 A
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.073 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment30 W
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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