Power Field-Effect Transistor, 9A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | RADIATION HARDENED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (Abs) (ID) | 9 A |
| Maximum drain current (ID) | 9 A |
| Maximum drain-source on-resistance | 0.18 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-205AF |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 25 W |
| Maximum power dissipation(Abs) | 25 W |
| Maximum pulsed drain current (IDM) | 27 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 75 ns |
| Maximum opening time (tons) | 100 ns |
| Base Number Matches | 1 |
| FSL13AOR1 | FSL13AOR4 | FSL13AOR3 | FSL13AOD1 | FSL13AOD3 | |
|---|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 9A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN | Power Field-Effect Transistor, 9A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN | Power Field-Effect Transistor, 9A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN | Power Field-Effect Transistor, 9A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN | Power Field-Effect Transistor, 9A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible |
| package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | RADIATION HARDENED | RADIATION HARDENED | RADIATION HARDENED | RADIATION HARDENED | RADIATION HARDENED |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V | 100 V | 100 V | 100 V | 100 V |
| Maximum drain current (Abs) (ID) | 9 A | 9 A | 9 A | 9 A | 9 A |
| Maximum drain current (ID) | 9 A | 9 A | 9 A | 9 A | 9 A |
| Maximum drain-source on-resistance | 0.18 Ω | 0.18 Ω | 0.18 Ω | 0.18 Ω | 0.18 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-205AF | TO-205AF | TO-205AF | TO-205AF | TO-205AF |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | METAL | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power consumption environment | 25 W | 25 W | 25 W | 25 W | 25 W |
| Maximum power dissipation(Abs) | 25 W | 25 W | 25 W | 25 W | 25 W |
| Maximum pulsed drain current (IDM) | 27 A | 27 A | 27 A | 27 A | 27 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maximum off time (toff) | 75 ns | 75 ns | 75 ns | 75 ns | 75 ns |
| Maximum opening time (tons) | 100 ns | 100 ns | 100 ns | 100 ns | 100 ns |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| Maker | - | Harris | Harris | Harris | Harris |
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