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8AF8RLH

Description
50 A, 800 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size136KB,5 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

8AF8RLH Overview

50 A, 800 V, SILICON, RECTIFIER DIODE

8AF8RLH Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.45 V
Maximum non-repetitive peak forward current747 A
Number of components1
Phase1
Maximum operating temperature195 °C
Maximum output current50 A
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Base Number Matches1
Bulletin I20262 Rev.A 06/03
8AF SERIES
PRESSFIT RECTIFIER DIODES
Features and Descriptions
Convenient pressfit package
Available with and without leads
High surge capabilities
50 A
Application
Welders, Battery charges, Alternators
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
I
2
t
I
2
√t
V
RRM
range
T
J
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
8AF
50
150
79
714
747
2546
2324
25455
100 to 800
- 65 to 195
Units
A
°C
A
A
A
A
2
s
A
2
s
A
2
√s
V
o
C
IR Case Style B-47
www.irf.com
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