PD - 94316
IRGC8B120KB
IRGC8B120KB IGBT Die in Wafer Form
Features
•
GEN5 Non Punch Through (NPT) Technology
•
Low V
CE(on)
•
10µs Short Circuit Capability
•
Square RBSOA
•
Positive V
CE(on)
Temperature Coefficient
Benefits
•
Benchmark Efficiency for Motor Control
•
Rugged Transient Performance
•
Excellent Current Sharing in Parallel Operation
•
Qualified for Industrial Market
1200 V
I
C(nom)
= 8A
VCE(on) typ. = 2.32V @
I
C(nom)
@ 25
°
C
Motor Control IGBT
Short Circuit Rated
150mm Wafer
C
G
E
Electrical Characteristics ( Wafer Form )
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Guaranteed (Min/Max)
Collector-to-Emitter Saturation Voltage
1.83V MIn., 2.27V Max.
Collector-to-Emitter Breakdown Voltage
1200V Min.
Gate Threshold Voltage
4.4V Min., 6.0V Max.
Zero Gate Voltage Collector Current
5.0 µA Max.
Gate-to-Emitter Leakage Current
±
1.1 µA Max.
Test Conditions
I
C
= 5.0A, T
J
= 25°C, V
GE
= 15V
T
J
= 25°C, I
CES
= 100µA, V
GE
= 0V
V
GE
= V
CE
, T
J
=25°C, I
C
=125µA
T
J
= 25°C, V
CE
= 1200V
T
J
= 25°C, V
GE
= +/- 20V
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Recommended Die Attach Conditions
Al-Ti-NiV-Ag ( 1kA-1kA-4kA-6kA )
99% Al, 1% Si (4 microns)
0.133" x 0.195"
150mm, with std. < 100 > flat
185 +/- 15 Microns
01-5429
100 Microns
0.25mm Diameter Minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
Die Outline
3.378
[.133]
1.953
[.077]
NOT ES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHE S].
2. CONTROLLING DIMENS ION: [INCH].
3. LET TE R DES IGNAT ION:
S = S OURCE
G = GATE
SK = SOURCE KELVIN
IS = CURRENT S ENS E
< 0.635 TOLE RANCE = + /- 0.013
< [.0250] T OLERANCE = + /- [.0005]
> 0.635 TOLE RANCE = + /- 0.025
> [.0250] T OLERANCE = + /- [.0010]
< 1.270 TOLE RANCE = + /- 0.102
< [.050] TOLE RANCE = + /- [.004]
> 1.270 TOLE RANCE = + /- 0.203
> [.050] TOLE RANCE = + /- [.008]
E = E MITT ER
4.953
[.195]
EMITT ER
0.696
[.027]
3.473
[.136]
4. DIMENS IONAL T OLERANCES:
BONDING PADS:
WIDT H
&
LE NGTH
G
OVERALL DIE :
WIDT H
0.701
[.027]
&
LE NGTH
10/02/01
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