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BUV48B

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size91KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

BUV48B Overview

Transistor

BUV48B Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV48B
DESCRIPTION
·With
TO-3PN package.
·High
voltage.
·Fast
switching speed.
APPLICATIONS
·Designed
for switching and industrial
applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current -peak
Base current
Base current-peak
Total power dissipation
Junction temperature
Storage temperature
t
p
<5ms
T
C
=25℃
t
p
<5ms
Open emitter
Open base
Open collector
CONDITIONS
VALUE
1200
600
7
15
30
4
20
125
150
-65~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-case
PARAMETER
Thermal resistance junction case
MAX
1.0
UNIT
℃/W
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