U05B4B48TE12R datasheet, PDF - EEWORLD Datasheet

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U05B4B48TE12R: DescriptionDIODE 0.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode; CategoryDiscrete semiconductor diode; File Size67KB，3 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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U05B4B48TE12R Overview

DIODE 0.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode

U05B4B48TE12R Parametric

Parameter Name	Attribute value
package instruction	R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PDSO-G4
Maximum non-repetitive peak forward current	33 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	0.5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	0.00001 µA
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

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Description	DIODE 0.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode	DIODE 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode	DIODE 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode	DIODE 0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode	DIODE 0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode	DIODE 0.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode
package instruction	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V	1 V	1 V	1 V
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Maximum non-repetitive peak forward current	33 A	33 A	33 A	33 A	33 A	33 A
Number of components	4	4	4	4	4	4
Phase	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Maximum output current	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	100 V	400 V	400 V	600 V	600 V	100 V
Maximum reverse current	0.00001 µA	0.00001 µA	0.00001 µA	0.00001 µA	0.00001 µA	0.00001 µA
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Base Number Matches	1	1	1	1	1	-
Maker	-	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
Is Samacsys	-	N	N	N	N	-

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