Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
PBYR1045D series
SYMBOL
QUICK REFERENCE DATA
V
R
= 40 V/ 45 V
k
tab
a
3
I
F(AV)
= 10 A
V
F
≤
0.57 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR1045D series is supplied
in the surface mounting SOT428
package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
no connection
cathode
1
anode
SOT428
tab
2
cathode
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
CONDITIONS
PBYR10
-
-
T
mb
≤
113 ˚C
square wave;
δ
= 0.5; T
mb
≤
134 ˚C
square wave;
δ
= 0.5; T
mb
≤
134 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j max
-
-
-
-
-
-
-
- 65
MIN.
40D
40
40
40
10
20
100
110
1
150
175
MAX.
45D
45
45
45
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
I
RRM
T
j
T
stg
1
It is not possible to make connection to pin 2 of the SOT428 package.
July 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
PBYR1045D series
MIN.
-
TYP. MAX. UNIT
-
50
2
-
K/W
K/W
pcb mounted, minimum footprint, FR4
board
-
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
F
I
R
C
d
Forward voltage
Reverse current
Junction capacitance
CONDITIONS
I
F
= 10 A; T
j
= 125˚C
I
F
= 20 A; T
j
= 125˚C
I
F
= 20 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 100˚C
V
R
= 5 V; f = 1 MHz, T
j
= 25˚C to 125˚C
MIN.
-
-
-
-
-
-
TYP. MAX. UNIT
0.5
0.74
0.65
0.2
22
350
0.57
0.8
0.84
1.3
35
-
V
V
V
mA
mA
pF
July 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1045D series
10
8
Forward dissipation, PF (W)
Vo = 0.34 V
Rs = 0.023 Ohms
0.2
PBYR1045D
0.5
Tmb(max) (C)
D = 1.0
130
134
100
Reverse current, IR (mA)
125 C
PBYR1045
10
100 C
6
4
0.1
138
1
75 C
50 C
0.1
142
I
t
p
t
p
D=
T
2
T
t
146
150
15
0
0.01
0
Tj = 25 C
25
Reverse voltage, VR (V)
50
0
5
10
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
√
D.
Forward dissipation, PF (W)
Vo = 0.34 V
Rs = 0.023 Ohms
8
6
4
2
0
4
2.8
2.2
1.9
PBYR1045D Tmb(max) (C)
Fig.4. Typical reverse leakage current; I
R
= f(V
R
);
parameter T
j
10
130
Cd / pF
1000
PBYR1045
a = 1.57 134
138
100
142
146
150
10
10
1
10
VR / V
100
0
2
4
6
8
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
PBYR1045
Fig.5. Typical junction capacitance; C
d
= f(V
R
);
f = 1 MHz; T
j
= 25˚C to 125 ˚C.
50
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
10
Transient thermal impedance, Zth j-mb (K/W)
40
1
30
typ
20
max
0.1
P
D
t
p
t
p
T
t
10
D=
0
T
0
0.2
0.4
0.6
0.8
1
Forward voltage, VF (V)
1.2
1.4
0.01
1us
10us
100us
1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYR1045
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.6. Transient thermal impedance; Z
th j-mb
= f(t
p
).
July 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm : Net Mass: 1.4 g
seating plane
6.73 max
1.1
2.38 max
0.93 max
5.4
PBYR1045D series
tab
4 min
6.22 max
10.4 max
4.6
2
1
3
0.5 min
0.3
0.5
0.5
0.8 max
(x2)
2.285 (x2)
Fig.7. SOT428 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
2.5
1.5
4.57
Fig.8. SOT428 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
PBYR1045D series
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
5
Rev 1.100
Embedded System
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