PBYR2545CT/CTB/CTE
Schottky barrier rectifier diodes
Rev. 05 — 20 January 2003
Product data
1. Product profile
1.1 Description
Dual, common cathode schottky rectifier diodes in two conventional leaded plastic
packages and one surface mount plastic package.
Product availability:
PBYR2545CT in SOT78 (TO-220AB)
PBYR2545CTB in SOT404 (D
2
-PAK)
PBYR2545CTE in SOT226 (I
2
-PAK).
1.2 Features
s
Low forward volt drop
s
Reverse surge capability
s
Fast switching
s
High thermal cycling performance
1.3 Applications
s
Switched mode power supplies
s
Low loss rectification
1.4 Quick reference data
s
V
RRM
≤
45 V
s
I
F(AV)
≤
30 A
s
V
F
≤
0.62 V
s
T
j(max)
≤
150
°C
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78, SOT404, SOT226 simplified outline and symbol
Description
anode 1
cathode
anode 2
cathode
2
MBL871
Simplified outline
[1]
mb
mb
mb
Symbol
1
3
2
MBK106
1
3
MBK116
1 2 3
1 2 3
MBK112
SOT78 (TO-220AB)
[1]
SOT404 (D
2
-PAK)
SOT226 (I
2
-PAK)
It is not possible to make connection to pin 2 of the SOT404 package.
Philips Semiconductors
PBYR2545CT/CTB/CTE
Schottky barrier rectifier diodes
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
RRM
V
RWM
V
R
I
F(AV)
T
stg
T
j
repetitive peak reverse voltage
working peak reverse voltage
continuous reverse voltage
average rectified forward current
storage temperature
junction temperature
repetitive peak forward current
non-repetitive peak forward current
square wave;
δ
= 0.5; T
mb
≤
126
°C
t
p
= 10 ms
t
p
= 8.3 ms;
sinusoidal; T
j
= 125
°C
prior to surge;
with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j(max)
T
mb
≤
113
°C
both diodes conducting;
square wave;
δ
= 0.5; T
mb
≤
126
°C
[1]
Conditions
Min
-
-
-
-
−
65
-
-
-
-
Max
45
45
45
30
+175
150
30
180
200
Unit
V
V
V
A
°C
°C
A
A
A
Per diode
I
FRM
I
FSM
I
RRM
repetitive peak reverse surge current
-
1
A
[1]
For output currents greater than 20A, the cathode connection should be made to the metal mounting tab.
9397 750 10926
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 05 — 20 January 2003
2 of 13
Philips Semiconductors
PBYR2545CT/CTB/CTE
Schottky barrier rectifier diodes
15
PF
(W)
10
0.1
0.2
Vo = 0.34 V
Rs = 0.014
Ω
0.5
003aaa210
127.5
Tmb (°C)
(max)
135
δ
=1
12
PF
(W)
2.8
8
4
Vo = 0.34 V
Rs = 0.014
Ω
2.2
1.9
003aaa211
132
Tmb (°C)
(max)
138
a = 1.57
P
5
δ
=
tp
T
142.5
4
144
tp
T
0
0
10
20
IF(AV) (A)
t
150
30
0
0
5
10
IF(AV) (A)
15
150
Square current waveform
Sinusoidal current waveform
I
F
(
AV
)
=
I
F
(
RMS
)
× δ
Fig 1. Maximum forward power dissipation (square
current waveform) as a function of average
forward current (per diode).
I
F
(
RMS
a
=
------------------
)
-
I
F
(
AV
)
Fig 2. Maximum forward power dissipation
(sinusoidal current waveform) as a function of
average forward current (per diode).
9397 750 10926
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 05 — 20 January 2003
3 of 13
Philips Semiconductors
PBYR2545CT/CTB/CTE
Schottky barrier rectifier diodes
4. Thermal characteristics
Table 3:
R
th(j-mb)
Thermal characteristics
Conditions
per diode;
Figure 3
both diodes
R
th(j-a)
thermal resistance from junction to ambient
SOT78 and SOT226
SOT404
vertical in still air
minimum footprint; mounted on an
FR4 printed-circuit board
-
-
60
50
-
-
K/W
K/W
Min Typ Max Unit
-
-
-
-
1.5
1
K/W
K/W
thermal resistance from junction to mounting base
Symbol Parameter
4.1 Transient thermal impedance
10
Zth(j-mb)
(K/W)
003aaa215
1
10-1
10-2
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 3. Transient thermal impedance from junction to mounting base per diode as a function of pulse duration.
9397 750 10926
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 05 — 20 January 2003
4 of 13
Philips Semiconductors
PBYR2545CT/CTB/CTE
Schottky barrier rectifier diodes
5. Characteristics
Table 4: Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 30 A; T
j
= 125
°C;
Figure 4
I
F
= 20 A; T
j
= 125
°C
I
F
= 30 A
Min
-
-
-
-
-
-
Typ
0.72
0.58
0.72
0.3
30
530
Max
0.76
0.62
0.82
2
40
-
Unit
V
V
V
mA
mA
pF
Static characteristics per diode
I
R
C
d
reverse current
diode capacitance
V
R
= V
RRM
;
Figure 5
V
R
= V
RRM
; T
j
= 100
°C
f = 1 MHz; V
R
= 5 V;
Figure 6
T
j
= 25
°C
to 125
°C
9397 750 10926
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 05 — 20 January 2003
5 of 13
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