Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
PBYR3045WT series
SYMBOL
QUICK REFERENCE DATA
V
R
= 40 V/ 45 V
a1
1
k 2
a2
3
I
O(AV)
= 30 A
I
FSM
= 300 A
V
F
≤
0.6 V
SOT429 (TO247)
GENERAL DESCRIPTION
Dual, common cathode schottky
rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR3045WT series is
supplied in the conventional leaded
SOT429 (TO247) package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
cathode
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
PBYR30
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
-
T
mb
≤
107 ˚C
square wave;
δ
= 0.5; T
mb
≤
124 ˚C
square wave;
δ
= 0.5; T
mb
≤
124 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j max
-
-
-
-
-
-
-
- 65
MIN.
MAX.
40WT
40
40
40
30
30
300
330
2
150
175
45WT
45
45
45
V
V
V
A
A
A
A
A
˚C
˚C
UNIT
I
RRM
T
j
T
stg
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
in free air
MIN.
-
-
-
TYP. MAX. UNIT
-
-
45
1.6
1.2
-
K/W
K/W
K/W
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
F
I
R
C
d
Forward voltage per diode
Reverse current per diode
Junction capacitance
CONDITIONS
I
F
= 20 A; T
j
= 125˚C
I
F
= 30 A; T
j
= 125˚C
I
F
= 30 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 100˚C
V
R
= 5 V; f = 1 MHz, T
j
= 25˚C to 125˚C
PBYR3045WT series
MIN.
-
-
-
-
-
-
TYP. MAX. UNIT
0.58
0.69
0.71
0.12
15
450
0.6
0.72
0.76
1.5
30
-
V
V
V
mA
mA
pF
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR3045WT series
15
Forward dissipation, PF (W)
Vo = 0.36 V
Rs = 0.012 Ohms
PBYR3045WT Ths(max) (C)
D = 1.0
126
100
Reverse current, IR (mA)
PBYR3045WT
125 C
0.5
10
0.1
0.2
134
10
100 C
1
75 C
50 C
0.1
Tj = 25 C
5
I
t
p
D=
t
p
T
t
142
T
0
0
5
10
15
20
Average forward current, IF(AV) (A)
150
25
0.01
0
25
Reverse voltage, VR (V)
50
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Forward dissipation, PF (W)
Vo = 0.36 V
Rs = 0.012 Ohms
PBYR3045WT Tmb(max) (C)
130.8
a = 1.57
1.9
134
2.2
2.8
137.2
140.4
143.6
146.8
150
15
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
12
10
8
6
4
2
0
Cd / pF
10000
PBYR3045CT
4
1000
0
5
10
Average forward current, IF(AV) (A)
100
1
10
VR / V
100
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
PBYR3045WT
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25˚C to 125 ˚C.
50
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
10
Transient thermal impedance, Zth j-mb (K/W)
40
1
30
typ
20
max
10
T
0.1
P
D
t
p
D=
t
p
T
t
0
0.01
0
0.2
0.4
0.6
0.8
1
Forward voltage, VF (V)
1.2
1.4
1us
10us
100us
1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYR3045WT
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.6. Transient thermal impedance per diode;
Z
th j-mb
= f(t
p
).
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
5.3
3.5
21
max
15.5
max
seating
plane
7.3
16 max
5.3 max
1.8
PBYR3045WT series
o 3.5
max
2.5
4.0
max
1
2.2 max
3.2 max
5.45
2
3
0.9 max
1.1
5.45
0.4 M
15.5
min
Fig.7. SOT429 (TO247); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
PBYR3045WT series
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
5
Rev 1.200
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