SML1004RAN-QR-B datasheet, PDF

SML1004RAN-QR-B: DescriptionPower Field-Effect Transistor, 3.9A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3; CategoryDiscrete semiconductor The transistor; File Size98KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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SML1004RAN-QR-B Overview

Power Field-Effect Transistor, 3.9A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown
Configuration	SINGLE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (ID)	3.9 A
Maximum drain-source on-resistance	4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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